IRF8714TRPBF - 30V 14A 8.7mΩ N-Ch HEXFET MOSFET | Infineon
MPN: IRF8714TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.46 | $1.46 |
| 10 | $1.21 | $12.10 |
| 100 | $0.94 | $94.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.66 | $660.00 |
IRF8714TRPBF Overview
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-to-source voltage creates a conductive channel between drain and source. N-channel MOSFETs are widely used as low-side or high-side switches in switching power supplies, motor drivers, and load management circuits because of their low on-state resistance and high switching speed. The IRF8714 belongs to the StrongIRFET family, which is optimized for high-current, low-voltage applications where both conduction and switching losses matter.
Key features include a 30 V drain-source breakdown voltage, 8.7 mΩ maximum RDS(on) at VGS = 10 V, 14 A continuous drain current at TA = 25 °C (with 2.5 W power dissipation), and a logic-compatible 20 V maximum gate-source voltage. The SO-8 footprint offers excellent thermal conduction through the source pin and copper pad, allowing the device to drive 14 A in a compact PCB area. Avalanche-rated construction adds robustness against inductive load transients common in motor and solenoid circuits.
The IRF8714 uses Infineon's proprietary planar HEXFET cell structure, which minimizes cell pitch and reduces RDS(on) × area figure of merit. Its 8.1 nC total gate charge keeps drive losses modest, and the SO-8 package provides a low thermal resistance path when soldered to a properly sized copper pour. The device is also RoHS-compliant and lead-free, meeting modern environmental requirements for consumer and industrial equipment.
Typical applications include synchronous buck converters in point-of-load regulators, DC motor drive and reverse-polarity protection circuits, battery management and load switching in notebook and tablet designs, hot-swap controllers for enterprise servers, and high-current LED drivers. The 30 V rating provides ample margin for 12 V bus rails with significant transient headroom.
When designing with the IRF8714TRPBF, ensure that the SO-8 thermal pad is soldered to at least 1 square inch of copper to keep junction temperature within safe limits at high currents. Use a gate resistor of 10 Ω to 100 Ω to control switching transients and avoid shoot-through in synchronous topologies.
This page synthesizes distributor pricing, drop-in alternative parts, and practical PCB design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IRF8714TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF8714TRPBF (same form factor and footprint) — differing in Package, FET Type, Technology, MSL Level, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF8714PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRLL2705TRPBF
✅ Drop-In✓ In Stock
$0.22 / Unit
View Datasheet →IRFR024NTRPBF
✅ Drop-In✓ In Stock
$0.31 / Unit
View Datasheet →IRFR540NPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRLL024NTRPBF
✅ Drop-In✓ In Stock
$0.22 / Unit
View Datasheet →IRFR9014NTRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF8714TRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | HEXFET / StrongIRFET (planar MOSFET) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25C | 14 A |
| On-State Resistance (RDS(on)) max at VGS=10V | 8.7 mΩ |
| Gate Charge (Qg) typical | 8.1 nC |
| Gate-Source Voltage (VGS) max | ±20 V |
| Power Dissipation (PD) at TA=25C | 2.5 W |
| Operating Temperature Range | -55C to +150C (junction) |
| Package | SO-8 (8-SOIC) |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Avalanche Rated | Yes |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant |
| MSL Level | 1 (per Infineon package qualification) |
IRF8714TRPBF Pin Configuration
| Pin 1 | Source — Source terminal (pin 1 of SO-8 standard pinout) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain — Drain terminal |
| Pin 6 | Drain — Drain terminal |
| Pin 7 | Drain — Drain terminal |
| Pin 8 | Drain — Drain terminal (thermal pad connection) |
Safe Operating Area (estimated from datasheet SOA envelope)
Typical Applications
IRF8714TRPBF is suitable for 6 applications: Synchronous Buck Converter Rectifier, DC Motor Drive and H-Bridge Switch, Notebook and Tablet Power Path Switching, Hot-Swap Controller Load Switch, High-Current LED Driver Switch, Reverse-Polarity Battery Protection.
Synchronous Buck Converter Rectifier
The IRF8714TRPBF's 30 V VDS rating and 8.7 mΩ RDS(on) make it a strong fit as the synchronous low-side MOSFET in 12 V-input buck converters. Its 8.1 nC gate charge keeps gate-drive losses low at switching frequencies of 300-500 kHz, supporting point-of-load regulators for FPGAs, ASICs, and microprocessors. Compared to a Schottky diode solution, the IRF8714 dramatically reduces conduction loss at high currents; a designer can expect efficiency gains of 4-8% at 10 A loads.
Recommended
DC Motor Drive and H-Bridge Switch
The IRF8714TRPBF is well-suited for DC motor drive applications including brushed DC H-bridges up to 24 V. Its 14 A continuous current and 30 V breakdown comfortably handle 12 V and 18 V motors with high inrush. The SO-8 footprint allows compact PCB integration, and avalanche ruggedness protects the FET from the inductive kickback when the motor is switched off. A standard gate-drive of 10 V gives full enhancement and minimizes on-state losses.
Recommended
Notebook and Tablet Power Path Switching
In portable electronics such as notebooks, tablets, and power banks, the IRF8714TRPBF acts as a load switch on the 5 V to 20 V rail, disconnecting subsystems in standby to extend battery life. Its 8.7 mΩ RDS(on) keeps voltage drop below 100 mV at 10 A load, which is critical for downstream regulators. The compact SO-8 footprint lets designers place the switch close to the connector, minimizing trace losses.
Recommended
Hot-Swap Controller Load Switch
Hot-swap controllers in enterprise servers and storage systems rely on rugged N-channel MOSFETs to inrush-limit 12 V outputs. The IRF8714TRPBF's 30 V VDS and 14 A current capacity suit 12 V rails up to 100 W per rail. Its SOA allows momentary operation in the linear region during plug-in events, and the SO-8 footprint provides adequate heat-sinking for sustained fault-current limiting up to several seconds.
Recommended
High-Current LED Driver Switch
The IRF8714TRPBF enables high-brightness LED driver designs where currents up to 14 A must be PWM-switched for dimming. Its low 8.7 mΩ RDS(on) keeps conduction loss under 1 W at 10 A, which is essential for thermal management in LED fixtures. The 30 V rating covers 12 V and 24 V LED strings with margin for transient overshoot, and the SO-8 footprint accepts standard SMT assembly processes.
Recommended
Reverse-Polarity Battery Protection
When used at the battery input of a system, the IRF8714TRPBF acts as a reverse-polarity protection switch that disconnects the load if a battery is inserted with reversed polarity. Its 30 V VDS withstands the negative transient of reversed 12 V batteries, and the 8.7 mΩ RDS(on) introduces minimal loss in normal operation. Combined with a smart battery monitor, this configuration is common in two-wheel EVs, robotics, and industrial battery packs.
Recommended
Recommended Products Summary
Engineering reference data for IRF8714TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF8714PBF | IRLL2705TRPBF | IRFR024NTRPBF | IRFR540NPBF | IRLL024NTRPBF |
|---|---|---|---|---|---|---|
| Package | SO-8 (8-SOIC) | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| FET Type / Polarity | N-Channel | N-Channel | N-Channel (logic-level) | N-Channel | N-Channel | N-Channel (logic-level) |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 55 V | 55 V | 100 V | 55 V |
| On-Resistance RDS(on) max at VGS=10V | 8.7 mΩ | 8.7 mΩ | 45 mΩ | 75 mΩ | 44 mΩ | 100 mΩ |
| Continuous Drain Current at TA=25C | 14 A | 14 A | 3.8 A | 17 A | 35 A | 5 A |
| Total Gate Charge (Qg) typical | 8.1 nC | 8.1 nC | 12 nC | 20 nC | 71 nC | 13 nC |
| Logic-Level Gate Drive (VGS(th) < 2.5V) | No (standard threshold) | No | Yes | No | No | Yes |
| Unit Price @ Qty 100 (USD) | 0.94 | 0.92 | 0.45 | 0.38 | 0.55 | 0.42 |
Key Differentiators
- Industry-leading RDS(on) in SO-8 at 30 V VDS (vs IRLL2705TRPBF)
- Lower gate charge than higher-voltage alternatives (vs IRFR540NPBF)
- Same SO-8 footprint, drop-in compatible (vs IRFR024NTRPBF)
Design Notes
At 10 A continuous current and 8.7 mΩ RDS(on), the IRF8714TRPBF dissipates approximately 0.87 W. The SO-8 package has a junction-to-ambient thermal resistance (theta_JA) of around 50 C/W on a 1 oz copper 1-square-inch pad, producing a junction-temperature rise of ~44 C. Estimated: ambient 25 C + 44 C = 69 C, well within the 150 C junction limit. For continuous 14 A operation, expand copper area to 2-3 sq inches or add top-side airflow to keep junction below 100 C.
The SO-8 footprint used by the IRF8714TRPBF has a JEDEC-standard land pattern that matches thousands of competing parts. Use 2 oz copper on the drain pads (pins 5-8) for best thermal performance, and stitch thermal vias from the top-layer drain pad to an internal ground plane. Solder paste stencil aperture of 1:1 to the land pattern is recommended, with no thermal relief spoke on drain pads to maximize heat conduction.
Do not exceed ±20 V on the gate - even brief transients above this level can rupture the gate oxide of the IRF8714TRPBF. Add a 10 kΩ pull-down on the gate to ensure the FET stays off during MCU power-up. Avoid driving the gate directly from a 3.3 V microcontroller GPIO if VGS(th) is above 2.5 V; in that case use a gate-driver or logic-level variant like IRLL2705TRPBF instead. Keep the gate-drive loop area minimal by placing the gate resistor within 5 mm of the gate pin.
In switching applications, minimize the high-side / low-side FET loop area to reduce parasitic inductance and ringing. Place the IRF8714TRPBF and its high-side counterpart on the same side of the PCB with the input capacitor return path directly beneath them. Use a 4-layer stack-up with a continuous ground plane under the switching node; this keeps di/dt loops small and reduces EMI by 10-15 dB compared to 2-layer designs.
Compliance Information
RoHS-compliant and lead-free per Infineon product page. Not AEC-Q100 qualified; for automotive applications use Infineon's automotive-grade StrongIRFET parts.
