IRLL2705TRPBF vs IRLL024NTRPBF Comparison
Detailed side-by-side comparison of IRLL2705TRPBF by Infineon and IRLL024NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLL2705TRPBF | IRLL024NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.22 | $0.22 |
| FET Type | N-Channel MOSFET, Metal Oxide | MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET fifth generation) | HEXFET Power MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at 25 deg C | 3.8 A | β |
| Peak Drain Current (IDM, pulsed) | 5.2 A | β |
| RDS(on) max at VGS=10V | 40 mOhm | β |
| Total Gate Charge (Qg) | 32 nC | 10.4 nC |
| Gate Drive Level | Logic-Level | β |
| Power Dissipation at TA=25 deg C | 1 W (Ta), 2.1 W (per LCSC listing) | β |
| Operating Temperature Range | -55 deg C to +175 deg C | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package | SOT-223 | SOT-223 (4-pin) |
| Dynamic dv/dt Rating | Yes | β |
| Lead-Free | Yes (PBF suffix) | β |
| RoHS Status | Compliant | Compliant |
| Polarity | β | N-Channel |
| Operating Mode | β | Enhancement Mode |
| V(BR)DSS (Drain-Source Breakdown Voltage) | β | 55 V |
| Continuous Drain Current (ID) at Ta | β | 3.1 A |
| Pulsed Drain Current (IDM) | β | 4.4 A |
| Static Drain-Source On-Resistance (RDS(on)) | β | 0.065 ohm |
| Gate Threshold Voltage (VGS(th)) | β | Logic Level (5 V drive capable) |
| Maximum Power Dissipation (Pd) at Ta | β | 1.0 W |
| Maximum Operating Junction Temperature | β | 175 C |