IRLML0030TRPBF vs IRLL024NTRPBF Comparison
Detailed side-by-side comparison of IRLML0030TRPBF by Infineon and IRLL024NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLML0030TRPBF | IRLL024NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.13 | $0.22 |
| FET Type | N-Channel | MOSFET, Metal Oxide |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TA=25C | 5.3 A | β |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V | β |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) | β |
| Total Gate Charge (Qg) | 3.6 nC typical | 10.4 nC |
| Power Dissipation (PD) at TA=25C | 1.3 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | Micro3 / SOT-23 (3-pin) | SOT-223 (4-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR HEXFET Power MOSFET | HEXFET Power MOSFET |
| MSL Level | 1 (unlimited floor life per JEDEC J-STD-020) | β |
| Soldering | Wave-solder capable | β |
| Qualification | JEDEC standard | β |
| RoHS Status | Compliant | Compliant |
| Polarity | β | N-Channel |
| Operating Mode | β | Enhancement Mode |
| V(BR)DSS (Drain-Source Breakdown Voltage) | β | 55 V |
| Continuous Drain Current (ID) at Ta | β | 3.1 A |
| Pulsed Drain Current (IDM) | β | 4.4 A |
| Static Drain-Source On-Resistance (RDS(on)) | β | 0.065 ohm |
| Gate Threshold Voltage (VGS(th)) | β | Logic Level (5 V drive capable) |
| Maximum Power Dissipation (Pd) at Ta | β | 1.0 W |
| Maximum Operating Junction Temperature | β | 175 C |