IRLML2030TRPBF vs IRLML0030TRPBF Comparison

Detailed side-by-side comparison of IRLML2030TRPBF by Infineon and IRLML0030TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLML2030TRPBF IRLML2030TRPBF - 30V N-Ch HEXFET MOSFET, 2.7A | Infineon

IRLML2030TRPBF - 30V N-Ch HEXFET MOSFET, 2.7A | Infineon

IRLML2030TRPBF βœ“ Active
Infineon
IRLML0030TRPBF IRLML0030TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRLML0030TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRLML0030TRPBF βœ“ Active

Specification Comparison

Parameter IRLML2030TRPBF IRLML0030TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.14 $0.13
Manufacturer Infineon Technologies β€”
Part Number IRLML2030TRPBF β€”
FET Type N-Channel N-Channel
Technology HEXFET (IR MOSFET) IR HEXFET Power MOSFET
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta 2.7 A β€”
Power Dissipation (PD) at Ta 1.3 W β€”
On-Resistance RDS(on) max @ VGS=10V 100 mOhm β€”
On-Resistance RDS(on) max @ VGS=4.5V 154 mOhm β€”
Gate-Source Voltage (VGS) max +/-20 V β€”
Gate Charge (Qg) typ 1.0 nC β€”
Package Micro3 (SOT-23) Micro3 / SOT-23 (3-pin)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C (junction) β€”
MSL Level MSL 1 1 (unlimited floor life per JEDEC J-STD-020)
RoHS Compliance Yes (lead-free, halogen-free) β€”
Qualification JEDEC standard JEDEC standard
Soldering Wave-solder compatible Wave-solder capable
Continuous Drain Current (ID) at TA=25C β€” 5.3 A
Drain-Source On-Resistance (RDS(on)) max β€” 27 mOhm at VGS=4.5V
Gate-Source Threshold Voltage (VGS(th)) β€” Logic-level (5 V optimized)
Total Gate Charge (Qg) β€” 3.6 nC typical
Power Dissipation (PD) at TA=25C β€” 1.3 W
Operating Temperature Range β€” -55C to +150C
RoHS Status β€” Compliant

Datasheets & Resources

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