IRLML2030TRPBF - 30V N-Ch HEXFET MOSFET, 2.7A | Infineon
MPN: IRLML2030TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.46 | $0.46 |
| 10 | $0.39 | $3.90 |
| 100 | $0.28 | $28.00 |
| 500 | $0.22 | $110.00 |
| 1,000 | $0.18 | $180.00 |
| 3,000 | $0.14 | $420.00 |
IRLML2030TRPBF Overview
A HEXFET power MOSFET is a single-chip N-channel enhancement-mode field-effect transistor that uses a hexagonal cell layout to minimize on-resistance per unit silicon area. In the power-management taxonomy, this device sits within discrete semiconductors -> MOSFETs -> N-channel enhancement MOSFETs -> logic-level MOSFETs, serving as the lowest-cost, smallest-footprint switching element for sub-3 A loads. The Micro3 (SOT-23) package is the de-facto industry standard for portable and handheld switching applications.
Key features of the IRLML2030TRPBF include an industry-standard Micro3 (SOT-23) pinout that is multi-vendor compatible, a maximum drain-source voltage of 30 V, a maximum gate-source voltage of Β±20 V, and a low typical gate charge of 1.0 nC. Logic-level VGS(th) (typically 1.0-2.5 V) makes the part directly drivable from 3.3 V and 5 V microcontrollers, eliminating the need for a separate gate-driver IC. Wave-solder compatibility simplifies PCB assembly.
Internally, the device uses Infineon's planar HEXFET cell architecture with a vertical DMOS structure. Compared with lateral MOSFETs in similar packages, the HEXFET structure achieves lower RDS(on) at a given die size. The 1.0 nC total gate charge keeps driver-side switching losses small at low PWM frequencies (<1 MHz), which is the typical operating regime for battery and load-switch applications. Avalanche-rated and JEDEC-qualified for industrial temperature ranges.
Typical applications include battery protection in single-cell Li-ion packs, load switching in portable electronics, DC-DC converter low-side switches, USB power-path management, and small motor or solenoid drivers. The 30 V rating comfortably handles 12 V bus rails with substantial transient headroom.
When designing with the IRLML2030TRPBF, place a gate-source resistor (10 kOhm typical) to prevent floating-Gate turn-on during hot-plug events. A TVS diode on VDS is recommended if the load is inductive. Thermal management at 1.3 W in SOT-23 requires attention to copper-pour area on the drain tab.
This page synthesizes Infineon datasheet parameters, distributor pricing as of 2026-09-11, drop-in SOT-23 alternatives from verified cross-reference data, and SOT-23 PCB design notes not aggregated on any single vendor page.
Drop-in alternatives for IRLML2030TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRLML2030TRPBF (same form factor and footprint) β differing in Technology, MSL Level, Package, Operating Temperature Range, Part Number.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRLML0030TRPBF
β Drop-Inβ In Stock
$0.13 / Unit
View Datasheet βIRLML2803TRPBF
β Drop-Inβ In Stock
$0.13 / Unit
View Datasheet βIRLML6246TRPBF
β Drop-Inβ In Stock
$0.11 / Unit
View Datasheet βIRLML6346TRPBF
β Drop-Inβ In Stock
$0.18 / Unit
View Datasheet βMGSF1N03LT1G
β Drop-Inπ Reference alternative (not in catalog)
SSM3K12T
β Drop-Inπ Reference alternative (not in catalog)
IRLML2030TRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IRLML2030TRPBF |
| FET Type | N-Channel |
| Technology | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta | 2.7 A |
| Power Dissipation (PD) at Ta | 1.3 W |
| On-Resistance RDS(on) max @ VGS=10V | 100 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | 154 mOhm |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Gate Charge (Qg) typ | 1.0 nC |
| Package | Micro3 (SOT-23) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55C to +150C (junction) |
| MSL Level | MSL 1 |
| RoHS Compliance | Yes (lead-free, halogen-free) |
| Qualification | JEDEC standard |
| Soldering | Wave-solder compatible |
IRLML2030TRPBF Pin Configuration
| Pin 1 | Gate (G) β Gate control input; logic-level compatible with 3.3V and 5V drive |
| Pin 2 | Source (S) β Source terminal; connected to PCB ground or low-side return path |
| Pin 3 | Drain (D) β Drain terminal; connected to package thermal tab and load/rail |
Safe Operating Area (DC)
Typical Applications
IRLML2030TRPBF is suitable for 6 applications: Single-Cell Li-ion Battery Protection, Load Switch for Portable Electronics, Low-Side Switch in DC-DC Converters, USB Power-Path Management, Small Solenoid and Relay Driver, IoT Sensor and Module Power Switching.
Single-Cell Li-ion Battery Protection
The IRLML2030TRPBF is widely used as the low-side protection MOSFET in single-cell Li-ion battery packs for portable electronics. Its 30 V VDS rating provides ample headroom above the 4.2 V fully-charged Li-ion voltage, while the 100 mOhm max RDS(on) at 10 V VGS keeps conduction loss under 100 mW at 1 A discharge. The 1.3 W power dissipation in SOT-23, with proper copper-pour design on the drain tab, supports continuous discharge currents up to 2.7 A. The logic-level VGS(th) allows direct gate drive from a 3.3 V battery management IC without a charge pump. Compared to larger DPAK protection MOSFETs, the SOT-23 form factor enables protection circuits in space-constrained wearables and IoT battery packs.
Recommended
Load Switch for Portable Electronics
The IRLML2030TRPBF is a natural choice as a high-side or low-side load switch in portable devices such as smartphones, wearables, and handheld instruments. Its 1.0 nC typical gate charge minimizes the inrush charge needed during turn-on, allowing a small gate RC network to control rise times in the 100 us-1 ms range without external drivers. The 30 V VDS and 2.7 A continuous ID comfortably support 5 V / 2 A USB rail switching. The MSL-1 rating simplifies SMT assembly, and the halogen-free part complies with green-product directives. Engineers can use the part directly from a microcontroller GPIO with a 10 kOhm gate pull-down resistor to prevent floating-gate turn-on during power-up.
Recommended
Low-Side Switch in DC-DC Converters
In buck or boost converters up to approximately 1 A output, the IRLML2030TRPBF serves as the low-side synchronous or freewheeling switch. The 1.0 nC gate charge reduces driver-side switching losses at PWM frequencies below 500 kHz, where most small point-of-load regulators operate. With 100 mOhm RDS(on) at 10 V VGS and 1.3 W dissipation capability, the part provides acceptable efficiency for sub-1 A outputs from 12 V or 5 V input rails. The SOT-23 footprint allows compact converter designs where DPAK would be too large. For higher-current converters (>2 A), an SO-8 part with lower RDS(on) is recommended. Pair the IRLML2030TRPBF with a logic-level gate-driver to achieve clean switching edges.
Recommended
USB Power-Path Management
The IRLML2030TRPBF is used as the VBUS switch in USB power-path management circuits for OTG and charging applications. Its 30 V VDS handles the 5 V VBUS rail with substantial headroom for ESD and surge transients, while the 2.7 A continuous rating supports USB 3.0 downstream charging at 900 mA-1.5 A. The logic-level gate threshold allows direct control from a USB Type-C controller GPIO. Combined with a TVS diode on VBUS for transient suppression, the part provides a compact, low-cost solution for USB power multiplexing. Compared with integrated load-switch ICs, a discrete IRLML2030TRPBF offers lower quiescent current draw (microamps vs tens of microamps), which matters for battery-powered OTG applications.
Recommended
Small Solenoid and Relay Driver
The IRLML2030TRPBF can drive small solenoids, latching relays, and piezo actuators where peak current is below 2.7 A and the supply rail is 12 V or 24 V. Its low 100 mOhm RDS(on) limits steady-state dissipation, and the SOT-23 footprint fits dense PCB designs. A freewheeling diode across the inductive load is mandatory; the 30 V VDS provides 6 V of margin above a 24 V rail after flyback clamping. The logic-level gate threshold simplifies microcontroller interfacing. For safety-critical or automotive relay applications, upgrade to an AEC-Q100-qualified alternative such as the BSS806NEH6327XTSA1 in the same package family.
Recommended
IoT Sensor and Module Power Switching
In IoT sensor nodes and wireless modules, the IRLML2030TRPBF provides per-rail power switching for sleep-mode power savings. With 1.0 nC typical gate charge, the part can be rapidly turned on/off by a microcontroller GPIO without injecting switching noise into sensitive analog or RF sections. The 30 V VDS accommodates a wide input range from single-cell Li-ion (3.0-4.2 V) through 12 V wall adapters with surge tolerance. Combined with a 100 nF bypass cap on the source, the part forms a clean power multiplexer for sensors that need <10 uA standby current. The MSL-1 and halogen-free ratings make it suitable for consumer IoT products targeting RoHS and green-product certifications.
Recommended
Recommended Products Summary
Engineering reference data for IRLML2030TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLML0030TRPBF | IRLML2803TRPBF | IRLML6246TRPBF | IRLML6346TRPBF | MGSF1N03LT1G | SSM3K12T(CTLNSN,F) |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | onsemi (cross-brand) | Toshiba (cross-brand) |
| Package | SOT-23 (Micro3) | SOT-23 - same | SOT-23 - same | SOT-23 - same | SOT-23 - same | SOT-23 - same | SOT-23 - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 20 V | 30 V | 30 V | 30 V |
| Continuous Drain Current (ID) | 2.7 A | 5.3 A (higher) | 4.2 A (higher) | 4.0 A (higher) | 3.4 A (higher) | 1.6 A (lower) | 2.5 A (similar) |
| RDS(on) max @ VGS=10V | 100 mOhm | ~40 mOhm (better) | ~60 mOhm (better) | ~80 mOhm (similar) | ~50 mOhm (better) | ~120 mOhm (worse) | ~100 mOhm (similar) |
| RDS(on) max @ VGS=4.5V | 154 mOhm | ~55 mOhm (better) | ~80 mOhm (better) | ~95 mOhm (better) | ~60 mOhm (better) | ~150 mOhm (similar) | ~140 mOhm (similar) |
| Gate Charge (Qg) typ | 1.0 nC | ~2.5 nC | ~10 nC | ~4.0 nC | ~3.0 nC | ~2.5 nC | ~1.5 nC |
| Logic-Level Drive (VGS<3V) | Yes (VGS(th) ~1.0-2.5V) | Yes | Limited (higher VGS(th)) | Yes (1.5V optimized) | Yes (1.5V optimized) | Limited | Yes |
| RoHS / Halogen-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
| Estimated Unit Price (1k qty) | $0.18 USD | $0.20 USD (similar) | $0.18 USD (similar) | $0.22 USD | $0.25 USD | $0.16 USD (lower) | $0.17 USD (similar) |
Key Differentiators
- Industry-standard Micro3 pinout for multi-vendor compatibility (vs MGSF1N03LT1G (onsemi))
- Lower RDS(on) than legacy generations at VGS = 4.5V (vs IRLML2803TRPBF)
- Optimized for 5V gate drive (Logic Level) (vs Toshiba SSM3K12T)
Design Notes
Estimated: At ID = 1.5 A and RDS(on) = 100 mOhm (worst-case, VGS = 10 V), conduction loss is approximately 225 mW. With the SOT-23 thermal resistance of approximately 150 C/W on the minimum JEDEC footprint, junction temperature rises ~34C above ambient, leaving a comfortable margin to the 150C TJ(max). For continuous operation at the full 2.7 A rating, increase the drain-tab copper pour to at least 100 mm^2 (1 square inch) to keep TJ below 100C at Ta = 25C. Without adequate copper, the part will thermally limit well below the datasheet current rating.
Place a 10 kOhm gate-source pull-down resistor directly at the gate pin to prevent floating-gate turn-on during MCU reset or power-up. A 100 ohm gate resistor limits ringing on fast switching edges. Connect the SOT-23 drain tab (pin 3) to a copper pour of at least 50 mm^2 for thermal dissipation; the tab is electrically connected to the drain. Keep the gate trace short and away from the drain switching node to minimize Miller coupling. Per Infineon application notes, place the input bypass capacitor within 5 mm of the source pin to control ground bounce.
Do not drive the gate above the maximum VGS rating of +/-20 V; gate-oxide rupture is instantaneous and non-recoverable. For inductive loads (relays, solenoids, motors), always add a flyback diode or TVS clamp across the load - the IRLML2030TRPBF avalanche rating is limited, and inductive kickback can exceed 30 V even on a 12 V rail. Do not use the part at VDS values above 24 V continuously without derating; per Infineon datasheet reliability data, sustained operation near VDS(max) accelerates hot-carrier degradation. Verify the actual VGS(th) of your reel - the part may not fully enhance at VGS = 3.3 V for tail-of-distribution units.
Compliance Information
RoHS compliant containing no lead, no bromide, and no halogen per Infineon datasheet. MSL 1 per JEDEC J-STD-020. Qualified per JEDEC standards. Not AEC-Q100 qualified; for automotive applications use a Q1-grade alternative.
