IRLML2803TRPBF vs IRLML0030TRPBF Comparison
Detailed side-by-side comparison of IRLML2803TRPBF by Infineon and IRLML0030TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLML2803TRPBF | IRLML0030TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.13 | $0.13 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IRLML2803TRPBF | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | IR MOSFET Generation V | IR HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | 5.3 A |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | Logic-level (5 V optimized) |
| Gate Charge (Qg) | 3.3 nC typical | β |
| Power Dissipation (PD) at TA=25C | 540 mW | 1.3 W |
| Package | Micro3 / SOT-23 (3-pin) | Micro3 / SOT-23 (3-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (TJ) | -55C to +150C |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) | β |
| MSL Level | 1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| RoHS Compliance | Compliant, Halogen-Free | β |
| FET Type | β | N-Channel |
| Drain-Source On-Resistance (RDS(on)) max | β | 27 mOhm at VGS=4.5V |
| Total Gate Charge (Qg) | β | 3.6 nC typical |
| Soldering | β | Wave-solder capable |
| Qualification | β | JEDEC standard |
| RoHS Status | β | Compliant |