IRLML2803TRPBF - 30V N-Ch MOSFET, 1.2A, SOT-23 | Infineon
MPN: IRLML2803TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.35 | $3.50 |
| 100 | $0.22 | $22.00 |
| 500 | $0.17 | $85.00 |
| 1,000 | $0.13 | $130.00 |
IRLML2803TRPBF Overview
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to amplify or switch electronic signals. N-Channel MOSFETs conduct when a positive voltage is applied to the gate relative to the source, making them the dominant choice for low-side switching in power management, motor control, and load switching. The IRLML2803TRPBF belongs to the logic-level gate-drive subcategory, allowing direct drive from 3.3V or 5V microcontrollers without a gate-driver stage, which simplifies BOM and saves PCB area. Its position in the broader taxonomy is: power MOSFET -> discrete semiconductor -> transistor -> semiconductor.
Key features include a gate threshold voltage around 1V, ultra-low on-resistance of 250 mΞ© at VGS=4.5V, low gate charge of 3.3 nC typical, fast switching speeds, and 540 mW maximum power dissipation. The Generation V IR MOSFET technology delivers a Figure of Merit (RDS(on) Γ Qg) that competes favorably with later-generation devices, and the device is rated for continuous operation up to 1.2A at the SOT-23 copper pad's typical thermal conditions.
Typical applications include DC-DC converter synchronous rectification, low-side load switching, battery protection circuits, USB power switches, motor driver bridges, and power-rail ORing. Its 1.2A current rating comfortably drives small brushed DC motors, solenoids, and LED driver strings in portable equipment, while the SOT-23 footprint suits space-constrained designs such as wearables, IoT nodes, and handheld instruments.
When designing with this device, observe the maximum power dissipation of 540 mW and provide adequate copper land area under the drain tab. Use a gate resistor of 10Ξ© to 100Ξ© to limit ringing, and keep the gate drive slew rate within the datasheet SOA. For new designs above 2A or requiring lower RDS(on), consider Generation VII or later devices such as IRLML0030 / IRLML2030, which share the same SOT-23 pinout and offer superior switching performance.
This page consolidates distributor pricing, drop-in alternatives, pin-level guidance, and design notes that go beyond a single datasheet β giving procurement and engineering teams a single source of truth for the IRLML2803TRPBF.
Drop-in alternatives for IRLML2803TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRLML2803TRPBF (same form factor and footprint) β differing in Technology, Package, MSL Level, On-Resistance RDS(on) max @ VGS=4.5V, Operating Temperature Range.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRLML0030TRPBF
β Drop-Inβ In Stock
$0.13 / Unit
View Datasheet βIRLML2030TRPBF
β Drop-Inβ In Stock
$0.14 / Unit
View Datasheet βIRLML2803TRPBF-1
β Drop-Inπ Reference alternative (not in catalog)
NTR4101PT1G
β Drop-Inπ Reference alternative (not in catalog)
DMG3415U-7
β Drop-Inπ Reference alternative (not in catalog)
IRLML2803TRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IRLML2803TRPBF |
| Transistor Type | N-Channel MOSFET |
| Technology | IR MOSFET Generation V |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.2 A |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum |
| Gate Charge (Qg) | 3.3 nC typical |
| Power Dissipation (PD) at TA=25C | 540 mW |
| Package | Micro3 / SOT-23 (3-pin) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C (TJ) |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) |
| MSL Level | 1 |
| RoHS Compliance | Compliant, Halogen-Free |
IRLML2803TRPBF Pin Configuration
| Pin 1 | Gate (G) β Logic-level gate drive input; connect to microcontroller GPIO or driver output through 10-100Ξ© gate resistor |
| Pin 2 | Drain (D) β Drain connection; internally tied to the copper tab of the SOT-23 package; main current-carrying terminal |
| Pin 3 | Source (S) β Source terminal; typically tied to circuit ground in low-side switching topology |
Safe Operating Area
Typical Applications
IRLML2803TRPBF is suitable for 6 applications: DC-DC Synchronous Rectification, USB Port Power Switch / Load Switch, Battery Protection (1-Cell Li-Ion), Small Brushed DC Motor Driver (Low-Side), LED Driver / PWM Dimming, IoT Sensor Node Power Gating.
DC-DC Synchronous Rectification
The IRLML2803TRPBF is well-suited as a low-side synchronous rectifier in buck converters up to 30V input. With 250 mΞ© RDS(on) at VGS=4.5V and 3.3 nC gate charge, switching losses remain small at 100 kHz to 1 MHz PWM frequencies. The logic-level gate drive eliminates the need for a separate gate-driver IC when driven from a 3.3V controller PWM output, reducing BOM cost. Placed on the low-side of a buck stage between the switching node and ground, the MOSFET adds minimal dead-time loss when paired with a P-channel high-side switch. Designers should still verify thermal performance β at 1.2A the conduction loss alone is ~360 mW, pushing the SOT-23 close to its 540 mW rating. Recommended companion MPNs include TPS54360 for the buck controller and SI2333DDS as a complementary P-channel high-side.
Recommended
USB Port Power Switch / Load Switch
In USB Type-A downstream ports and general load-switch applications, the IRLML2803TRPBF delivers clean logic-level switching at 1.2A continuous, suitable for 5V/500 mA USB 2.0 and up to 1A USB 3.0 auxiliary rails. Its 250 mΞ© RDS(on) imposes only 125 mV drop at 500 mA β well within USB voltage-tolerance specs. The N-Channel device wired in low-side configuration with gate pulled to 5V through a 100 kΞ© resistor and switched by an NPN transistor or GPIO is a classic USB power-switch topology. Reverse-current blocking can be added with a second MOSFET; the Infineon IRFML8244 (P-channel) shares the same SOT-23 footprint and pairs naturally. For 3A+ USB-C, upgrade to IRLML0030 with Generation VII technology.
Recommended
Battery Protection (1-Cell Li-Ion)
The IRLML2803TRPBF is widely used as the protection MOSFET in single-cell Li-Ion battery packs where a small SOT-23 footprint is critical. With 30V VDS it safely handles charger transients on 4.2V rails, and its 1.2A continuous rating suits small wearables, IoT sensors, and Bluetooth headphones. Typically two IRLML2803 devices are wired back-to-back (source-to-source) to provide bidirectional disconnect controlled by the protection IC. The logic-level gate threshold simplifies the protection-IC interface; a single BQ29700 or DW01-P-style IC can drive the gates directly. The low RDS(on) of 250 mΞ© keeps IR drop below 1% of battery capacity, preserving usable runtime.
Recommended
Small Brushed DC Motor Driver (Low-Side)
For low-voltage brushed DC motors up to 1A continuous (toy motors, vibration motors, small solenoids), the IRLML2803TRPBF provides a compact low-side switch directly drivable from a microcontroller PWM output at 3.3V or 5V. PWM frequencies from 1 kHz to 25 kHz are easily supported thanks to the 3.3 nC gate charge and Generation V technology. Freewheeling current from the motor inductance requires an external Schottky diode (such as B5819W) across the motor; the IRLML2803 has no integrated body-diode protection optimized for high dV/dt. The thermal budget supports intermittent duty cycles; for continuous 1A motor drive, add copper pours under the SOT-23 drain tab.
Recommended
LED Driver / PWM Dimming
PWM dimming of high-brightness LEDs benefits from the IRLML2803TRPBF's logic-level gate drive and 1.2A current handling. The MOSFET switches the LED cathode to ground at PWM frequencies of 200 Hz to 10 kHz, with duty cycle controlling perceived brightness. At 350 mA typical LED current, RDS(on) loss is only ~30 mW, keeping the device well within thermal limits. The fast switching edge allows crisp dimming with no visible flicker in high-end lighting. For multi-channel LED strings or RGB applications, parallel use of three IRLML2803 devices in the same SOT-23 footprint saves PCB area versus discrete drivers.
Recommended
IoT Sensor Node Power Gating
In battery-powered IoT sensor nodes, the IRLML2803TRPBF acts as a load-disconnect switch to power-gate radios, sensors, and auxiliary MCUs in sleep states. Its 1.2A continuous rating covers the inrush of Wi-Fi/BLE transmit bursts and sensor warm-up. With logic-level gate drive directly from a low-power MCU GPIO, no additional driver is needed. Quiescent drain through the gate leakage (typically <1 ΞΌA) is negligible compared to the nA-level sleep current of modern MCUs, preserving battery life. The SOT-23 footprint fits even the smallest coin-cell designs. For 100% power-down isolation, place the IRLML2803 between the battery and the load, with gate pulled low via 100 kΞ© to ground.
Recommended
Recommended Products Summary
Engineering reference data for IRLML2803TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLML0030TRPBF | IRLML2030TRPBF | IRLML2803TRPBF-1 | NTR4101PT1G | DMG3415U-7 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Diodes Incorporated |
| Package | SOT-23 (Micro3) | SOT-23 - same | SOT-23 - same | SOT-23 - same | SOT-23 - same | SOT-23 - same |
| VDS Maximum | 30 V | 30 V | 20 V (-33%) | 30 V | 20 V (-33%) | 20 V (-33%) |
| Continuous Drain Current (TA=25C) | 1.2 A | 5.3 A (+340%) | 5.3 A | 1.2 A | 3.4 A | 4 A |
| Technology | Generation V IR MOSFET | Generation VII IR MOSFET | Generation VII IR MOSFET | Generation V IR MOSFET | onsemi Trench | Diodes Inc Trench |
Key Differentiators
- Drop-in Generation VII upgrade available in same footprint (vs IRLML0030TRPBF)
- Cross-brand second source from onsemi (vs NTR4101PT1G)
- Lower on-resistance than predecessors in same package (vs IRLML2402TRPBF)
Design Notes
Estimated: at ID=1.2A continuous and RDS(on)=250 mΞ© the conduction loss is ~360 mW β already 67% of the 540 mW datasheet maximum at TA=25C. With the standard SOT-23 copper footprint (1 oz copper, ~100 mmΒ² pad), the device reaches thermal shutdown around 1A continuous at TA=25C. Add a copper thermal pour (recommended β₯200 mmΒ² with thermal vias) for designs above 500 mA. Above 1A consider the IRLML0030TRPBF Generation VII alternative which has lower RDS(on) and the same SOT-23 footprint.
The SOT-23 drain pin (pin 2) is internally bonded to the copper tab. Maximize the drain copper pour and stitch thermal vias to the opposite ground plane to achieve the rated power dissipation. Place the gate resistor (10Ξ© to 100Ξ©) as close as possible to pin 1 to limit parasitic gate inductance and ringing at high dV/dt. Keep the gate trace short and away from switching-node copper to avoid capacitive coupling that may cause false turn-on in half-bridge topologies.
Do not exceed VDS=30V β inductive load switching without a flyback diode or snubber can create voltage spikes that puncture the oxide. For motor or solenoid drive, always add a flyback Schottky (B5819W or similar) across the load. Do not parallel multiple IRLML2803 devices to achieve higher current β the SOT-23 footprint cannot dissipate combined losses; instead upgrade to IRLML0030. Finally, gate-source ESD protection is not rated above 2kV HBM; handle with standard ESD precautions.
Compliance Information
RoHS compliant and Halogen-Free per Infineon datasheet. Not AEC-Q100 qualified β not intended for automotive under-hood applications. Pb-free termination (PBF suffix) is standard.
