IRLML5103TRPBF vs BSS138NH6327XTSA2 Comparison
Detailed side-by-side comparison of IRLML5103TRPBF by Infineon and BSS138NH6327XTSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLML5103TRPBF | BSS138NH6327XTSA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.05 | $0.15 |
| Transistor Type | P-Channel MOSFET | β |
| Maximum Drain-Source Voltage | 30 V | β |
| Continuous Drain Current | 760 mA at Ta | β |
| Power Dissipation | 540 mW at Ta | β |
| Maximum On-Resistance | 600 mOhm | β |
| Gate Charge | 3.4 nC | β |
| Technology | IR MOSFET | β |
| Package | Micro3/SOT-23 | PG-SOT-23 (3-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Polarity | P-Channel | N-Channel |
| Drain-Source Voltage Rating | -30 V | β |
| Channel Mode | Enhancement | β |
| Operating Temperature | 175 C | β |
| RoHS Status | Compliant | β |
| Footprint | SOT-23 | β |
| Operating Mode | β | Enhancement |
| V(BR)DSS (Drain-Source Breakdown Voltage) | β | 60 V |
| R_DS(on) max @ V_GS=10V | β | 3.5 ohm |
| Continuous Drain Current (Ta) | β | 230 mA |
| Power Dissipation (Ta) | β | 360 mW |
| Gate Threshold V_GS(th) | β | [DATA_NEEDED: typical V_GS(th) value] |
| Operating Temperature Range | β | [DATA_NEEDED: Tj max and operating range] |
| Gate-Source Voltage V_GS max | β | Β±20 V |
| dv/dt Rated | β | Yes |
| Halogen-Free | β | Yes (per IEC 61249-2-21) |
| RoHS Compliance | β | Compliant |
| AEC-Q101 Qualification | β | Qualified |
| Lead Plating | β | Pb-free |
| Marking Code | β | [DATA_NEEDED: top-side marking code] |
| Packaging | β | Tape and Reel |