IRLML5103TRPBF vs BSS84PH6327XTSA2 Comparison
Detailed side-by-side comparison of IRLML5103TRPBF by Infineon and BSS84PH6327XTSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLML5103TRPBF | BSS84PH6327XTSA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.05 | $0.10 |
| Transistor Type | P-Channel MOSFET | β |
| Maximum Drain-Source Voltage | 30 V | β |
| Continuous Drain Current | 760 mA at Ta | β |
| Power Dissipation | 540 mW at Ta | β |
| Maximum On-Resistance | 600 mOhm | β |
| Gate Charge | 3.4 nC | β |
| Technology | IR MOSFET | β |
| Package | Micro3/SOT-23 | PG-SOT23 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Polarity | P-Channel | P-Channel Enhancement Mode |
| Drain-Source Voltage Rating | -30 V | β |
| Channel Mode | Enhancement | β |
| Operating Temperature | 175 C | -55C to +150C |
| RoHS Status | Compliant | Compliant |
| Footprint | SOT-23 | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSS84PH6327XTSA2 |
| FET Type | β | P-Channel |
| Drain-to-Source Voltage (VDS) | β | -60 V |
| Continuous Drain Current (ID) | β | -170 mA (Ta) |
| Power Dissipation (PD) | β | 360 mW (Ta) |
| On-State Resistance (RDS(on)) max | β | 8 ohm at VGS = -10 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-to-Source Voltage (VGS) | β | +/-20 V |
| Qualification | β | AEC-Q101 (Automotive) |
| Technology Family | β | SIPMOS OptiMOS |
| Lead-Free | β | Yes |