IRLML6246TRPBF vs BSS214NH6327XTSA1 Comparison

Detailed side-by-side comparison of IRLML6246TRPBF by Infineon and BSS214NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLML6246TRPBF IRLML6246TRPBF - 20V N-Channel HEXFET MOSFET | Infineon

IRLML6246TRPBF - 20V N-Channel HEXFET MOSFET | Infineon

IRLML6246TRPBF βœ“ Active
Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 βœ“ Active

Specification Comparison

Parameter IRLML6246TRPBF BSS214NH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.11 $0.09
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Part Number IRLML6246TRPBF β€”
Technology IR MOSFET (HEXFET Power MOSFET) OptiMOS 2 (planar N-channel)
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 20 V β€”
Continuous Drain Current (ID) at Ta=25C 4.1 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] β€”
On-Resistance RDS(on) max @ VGS=4.5V 46 mOhm β€”
On-Resistance RDS(on) max @ VGS=2.5V [DATA_NEEDED: RDS(on) at 2.5V] β€”
Gate Threshold Voltage VGS(th) typ 1.1 V (logic-level) β€”
Gate Charge Qg typ [DATA_NEEDED: Qg total gate charge] β€”
Power Dissipation (Ta=25C) 1.3 W β€”
Operating Temperature Range -55C to +150C (junction) -55C to +150C (junction)
Package SOT-23 (Micro3) SOT-23 (PG-SOT23), 3 pins
Mounting Type Surface Mount Surface Mount
RoHS Compliance Yes (Pb-free) β€”
Halogen-Free Yes β€”
MSL Level MSL1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Drain-Source Voltage (VDS) β€” 20 V
Continuous Drain Current (ID) β€” 1.5 A (Ta)
Power Dissipation (PD) β€” 500 mW (Ta)
Drain-Source On-Resistance (RDS(on) max) β€” 250 mOhm at VGS = 4.5 V
Gate-Source Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-Source Voltage (VGS max) β€” Β±12 V (recommended)
Qualification β€” AEC-Q101 (Automotive)
Lead Finish β€” Pb-free lead plating (matte tin)
RoHS Status β€” Compliant
ESD Protection β€” Yes (gate ESD diode)

Datasheets & Resources

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