IRLML6246TRPBF - 20V N-Channel HEXFET MOSFET | Infineon
MPN: IRLML6246TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.36 | $3.60 |
| 100 | $0.24 | $24.00 |
| 500 | $0.18 | $90.00 |
| 1,000 | $0.14 | $140.00 |
| 3,000 | $0.11 | $330.00 |
IRLML6246TRPBF Overview
A power MOSFET is a voltage-controlled three-terminal semiconductor switch used to commutate current between drain and source under the control of a gate signal. Within the broader taxonomy, the IRLML6246 sits in the low-voltage (<=30V) logic-level N-channel enhancement-mode category, descended from power MOSFET -> discrete semiconductor -> transistor. Logic-level N-channel MOSFETs are particularly important in portable, battery, and USB-powered designs because they can be driven directly from low-voltage GPIO without a charge pump or gate driver. The IRLML6246 family is part of Infineon's HEXFET Power MOSFET portfolio, an industry-standard benchmark for efficiency and thermal performance in micro-packages.
Key differentiating features include the 4.1A continuous drain current, 46 mOhm typical on-resistance, logic-level VGS(th) around 1.1V, and the industry-standard SOT-23 footprint. The part is halogen-free and fully RoHS compliant. The combination of a small SOT-23 outline, low Rds(on), and true logic-level drive enables designers to shrink load-switch, power-rail, and DC-DC synchronous-rectifier circuits that previously required a larger SO-8 or DPAK device.
The device uses Infineon's IR MOSFET planar cell architecture, with the gate oxide and source metallization tuned for low gate charge (Qg) and fast switching transitions. This reduces both conduction and switching losses, which is critical in high-frequency synchronous rectification in buck converters and in PWM load-switch topologies where dead-time losses dominate. The SOT-23 package's exposed lead frame also helps wick heat into the PCB copper.
Typical applications include load switching in smartphones and wearables, USB VBUS power distribution, battery protection / charging FETs in single-cell Li-ion packs, high-side load drivers in IoT sensor nodes, and synchronous-rectifier low-side FETs in tiny point-of-load buck converters. The logic-level gate makes the IRLML6246 a drop-in choice when 3.3V or 1.8V MCUs must directly drive a switch without a level shifter.
When laying out the PCB, place the source tab land pattern to maximize copper pour and minimize thermal resistance; the SOT-23 dissipates only 1.3W at Ta=25C with the standard JEDEC footprint, so a 0.5 sq-inch copper pad is recommended at full load. Always observe the SOA at high currents, especially during inrush on highly capacitive loads such as USB VBUS hot-plug events.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the bare manufacturer datasheet, including cross-brand same-package equivalents and SOA-aware design guidance.
Drop-in alternatives for IRLML6246TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRLML6246TRPBF (same form factor and footprint) — differing in Package, Technology, MSL Level, RoHS Compliance, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRLML6346TRPBF
✅ Drop-In✓ In Stock
$0.18 / Unit
View Datasheet →IRLML2803TRPBF
✅ Drop-In✓ In Stock
$0.13 / Unit
View Datasheet →BSS138NH6327XTSA2
✅ Drop-In✓ In Stock
$0.15 / Unit
View Datasheet →BSS214NH6327XTSA1
✅ Drop-In✓ In Stock
$0.09 / Unit
View Datasheet →VB1240
✅ Drop-In📋 Reference alternative (not in catalog)
IRLML6246TRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLML6246TRPBF |
| Technology | IR MOSFET (HEXFET Power MOSFET) |
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 20 V |
| Continuous Drain Current (ID) at Ta=25C | 4.1 A |
| On-Resistance RDS(on) max @ VGS=4.5V | 46 mOhm |
| Gate Threshold Voltage VGS(th) typ | 1.1 V (logic-level) |
| Power Dissipation (Ta=25C) | 1.3 W |
| Operating Temperature Range | -55C to +150C (junction) |
| Package | SOT-23 (Micro3) |
| Mounting Type | Surface Mount |
| RoHS Compliance | Yes (Pb-free) |
| Halogen-Free | Yes |
| MSL Level | MSL1 (per JEDEC J-STD-020) |
IRLML6246TRPBF Pin Configuration
| Pin 1 | GATE — MOSFET gate; logic-level driven |
| Pin 2 | DRAIN — MOSFET drain; connected to load |
| Pin 3 | SOURCE — MOSFET source; tied to thermal tab on bottom of package |
IRLML6246 Safe Operating Area (estimated, SOT-23 1 sq-in copper, Ta=25C, DC)
Typical Applications
IRLML6246TRPBF is suitable for 6 applications: USB VBUS Load Switch, Single-Cell Li-Ion Battery Protection / Charging Path FET, Synchronous Rectifier Low-Side FET in Point-of-Load Buck Converter, IoT Sensor Node High-Side Load Driver, Wearable Device Power Rail Switching, LED Driver Low-Side Switch for Indicator and Backlight Circuits.
USB VBUS Load Switch
The IRLML6246TRPBF is widely used as a high-side load switch on USB VBUS rails in smartphones, tablets, and hub designs. With 20V VDS headroom (well above USB 5V), 46 mOhm typical RDS(on) at 4.5V VGS, and a true logic-level gate threshold around 1.1V, the part can be driven directly from a 3.3V MCU GPIO without a gate driver. In a typical application the IRLML6246 sits between the VBUS pin and the downstream load, with the gate pulled up through a 100k resistor and a GPIO driving it low to disconnect. Compared with a P-channel alternative it eliminates the need for a charge pump and reduces on-resistance by roughly 2x, cutting conduction losses and self-heating in sustained-current paths. The 4.1A continuous rating supports USB 3.0 hot-plug inrush within the SOT-23 1.3W dissipation envelope when laid out on the recommended 1 sq-inch copper pour.
Recommended
Single-Cell Li-Ion Battery Protection / Charging Path FET
In single-cell Li-ion battery management circuits the IRLML6246TRPBF serves as the low-side protection FET or charging-path switch, thanks to its 20V VDS (well above the 4.2V max cell voltage) and 4.1A continuous current rating (sufficient for 1C-2C charge rates on cells up to ~2Ah). The logic-level gate is driven directly from the battery fuel-gauge or protection-IC GPIO. RDS(on) of 46 mOhm contributes only ~7mV drop at 1A charge current, preserving efficiency in low-power IoT wearables. Compared with discrete bipolar transistors historically used in this role, the IRLML6246 cuts conduction losses by an order of magnitude and removes the base-drive current. The SOT-23 footprint also enables the protection FET to be co-located with the cell connector, minimizing parasitic inductance during short-circuit events.
Recommended
Synchronous Rectifier Low-Side FET in Point-of-Load Buck Converter
The IRLML6246TRPBF is a popular synchronous-rectifier low-side FET in tiny point-of-load buck converters delivering 0.5A-3A from 5V or 12V rails. Its low 46 mOhm RDS(on) at 4.5V VGS and small SOT-23 footprint allow the synchronous stage to fit beneath the high-side FET on a single-layer PCB. Logic-level gate threshold (~1.1V) means the part can be driven directly from a 3.3V PWM controller output without a bootstrap or gate driver, simplifying the converter to just the controller IC, inductor, capacitors, and two MOSFETs. The 1.3W package dissipation envelope supports up to about 2.5A continuous output at 5V VIN. Compared with Schottky-diode rectification the IRLML6246 typically reduces rectifier losses by 60-80%, improving overall efficiency by 3-5% across the load range.
Recommended
IoT Sensor Node High-Side Load Driver
Battery-powered IoT sensor nodes use the IRLML6246TRPBF as a high-side load driver for sensors, radios, and actuators that must be powered down during deep-sleep to minimize quiescent drain. The logic-level gate lets an MCU GPIO at 1.8V-3.3V enable the load directly, while 46 mOhm RDS(on) keeps voltage drop across the switch below 5mV at 100mA typical IoT load currents. The 4.1A continuous rating also supports peak radio TX bursts in sub-GHz and BLE radios drawing 200-500mA. Compared with load-switch ICs the discrete IRLML6246 offers lower RDS(on) per square millimeter and lower cost at high volumes, at the expense of needing external gate pull-down. The SOT-23 footprint allows the load switch to be placed adjacent to each power rail, simplifying layout in densely packed sensor boards.
Recommended
Wearable Device Power Rail Switching
Wearables such as smartwatches, fitness bands, and hearables use the IRLML6246TRPBF for power-rail switching between the main PMIC output and downstream functional blocks like the display, heart-rate sensor, haptics driver, and BLE radio. The 1.3W SOT-23 package dissipates cleanly into the small PCB copper available inside a wrist-worn enclosure, and 46 mOhm RDS(on) keeps voltage drop below 2% even at 200mA peak load. The logic-level gate interfaces directly with the always-on MCU at 1.8V, eliminating level shifters and saving board area. Compared with integrated load-switch ICs the IRLML6246 offers lower on-resistance at lower cost per channel, which is critical in wearables where every microamp of quiescent current and every square millimeter of board space matters.
Recommended
LED Driver Low-Side Switch for Indicator and Backlight Circuits
In low-power LED indicator and backlight circuits the IRLML6246TRPBF operates as a low-side PWM switch, modulating LED current at 100Hz-2kHz to dim indicator LEDs or provide analog backlight control. The 4.1A rating covers strings up to about 1.5A continuous (sufficient for most indicator LEDs at 20mA and small backlight arrays at 100-500mA). Logic-level gate drive lets the part be PWM'd directly from an MCU GPIO at 3.3V without a driver, simplifying the BOM. The 20V VDS comfortably handles stacked LED strings of 3-5 series white LEDs from a 12V rail. Compared with bipolar transistors the IRLML6246 eliminates base-current loss and provides faster switching edges, enabling higher dimming ratios without visible flicker at low duty cycles.
Recommended
Recommended Products Summary
Engineering reference data for IRLML6246TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLML6346TRPBF | IRLML2803TRPBF | BSS138NH6327XTSA2 | VB1240 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | SOT-23 (Micro3) | SOT-23 (Micro3) - same | SOT-23 (Micro3) - same | SOT-23 (Micro3) - same | SOT-23 (Micro3) - same |
| FET Type / Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Drain-to-Source Voltage VDS | 20 V | 30 V | 30 V | 60 V | 20 V |
| Continuous Drain Current ID (Ta=25C) | 4.1 A | 5.4 A | 1.6 A | 0.23 A | 6.0 A |
| RDS(on) max @ VGS=4.5V | 46 mOhm | 34 mOhm | 180 mOhm | 3500 mOhm | 28 mOhm |
| Gate Threshold VGS(th) typ | 1.1 V | 1.1 V | 1.0 V | 1.4 V | 1.0 V |
| Power Dissipation (Ta=25C) | 1.3 W | 1.3 W | 1.3 W | 0.36 W | 1.5 W |
| Approx. 1k Price (USD) | $0.14 | $0.16 | $0.20 | $0.05 | $0.08 |
Key Differentiators
- Lower RDS(on) at 4.5V VGS vs IRLML2803TRPBF (vs IRLML2803TRPBF)
- Higher continuous current than BSS138NH6327XTSA2 (vs BSS138NH6327XTSA2)
- Improved RDS(on) vs domestic cross-brand VB1240 (vs VB1240)
Design Notes
Estimated: at ID=4.1A continuous and RDS(on)=46 mOhm at 125C Tj (RDS(on) rises ~1.5x from 25C), conduction loss is about P = I^2 * R = 4.1^2 * 0.069 = 1.16W. Combined with switching losses in a 100kHz application, total dissipation approaches the 1.3W package limit at Ta=25C on 1 sq-inch copper. For designs operating above Ta=40C ambient, derate current to about 2.5A continuous or add a heatsink copper pour of 2+ sq-inches to maintain Tj below 150C. Always validate with the manufacturer's SOA curves and measure Tj in a thermal chamber for production designs.
Use the JEDEC-standard SOT-23 land pattern with the source pin (pin 3) tied to a copper pour of at least 1 square inch for full 4.1A current rating. Place a 100k gate pull-down resistor to ensure the MOSFET stays off during MCU reset or power-up; without this resistor the gate can float and partially enhance the FET, causing shoot-through in half-bridge configurations. For switching applications above 100kHz, place a 10-100 Ohm gate resistor in series with the driver to dampen parasitic ringing between the gate-source capacitance and the gate-driver trace inductance.
Do not exceed VGS=+/-12V absolute maximum - although the datasheet specifies +/-8V continuous, transients from gate-drive inductance can punch through the thin gate oxide. Add a 10k pull-down on the gate to prevent floating-gate turn-on during MCU brown-out. For inrush-limited USB VBUS hot-plug designs, be aware that the IRLML6246 has no internal current limit; add a soft-start RC network or upstream fuse to handle short-circuit events. Lastly, verify the pinout (G-D-S) matches your competitor part - some P-channel SOT-23 MOSFETs share the same footprint but pin 1/2 assignments differ, causing catastrophic reverse-mount failures.
Compliance Information
RoHS and halogen-free per Infineon datasheet. 'PBF' suffix in MPN explicitly denotes lead-free plating. Not AEC-Q100 qualified (consumer/industrial grade); for automotive designs consult Infineon automotive-grade OptiMOS portfolio.
