IRLR2705TRPBF vs IRFR5305TRPBF Comparison

Detailed side-by-side comparison of IRLR2705TRPBF by Infineon and IRFR5305TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLR2705TRPBF IRLR2705TRPBF - 55V 28A N-Channel HEXFET MOSFET | Infineon

IRLR2705TRPBF - 55V 28A N-Channel HEXFET MOSFET | Infineon

IRLR2705TRPBF βœ“ Active
Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF βœ“ Active

Specification Comparison

Parameter IRLR2705TRPBF IRFR5305TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.36 $0.32
FET Type N-Channel MOSFET, Metal Oxide β€”
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at Tc=25C 28 A β€”
Continuous Drain Current (ID) at TA=25C [DATA_NEEDED: ID at TA=25C with 1in2 copper] β€”
RDS(on) Max at VGS=10V 40 mOhm β€”
RDS(on) Max at VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] β€”
Gate-to-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute max, +/-V] β€”
Gate Threshold Voltage (VGS(th)) Logic-Level (compatible with 4V drive) β€”
Total Gate Charge (Qg) 16.7 nC β€”
Power Dissipation (PD) at Tc=25C 68 W β€”
Power Dissipation (PD) at TA=25C [DATA_NEEDED: PD at TA=25C with 1in2 copper] β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-252AA (DPAK) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Technology HEXFET (IR MOSFET generation 5) HEXFET (IR MOSFET)
Avalanche Rated Yes β€”
Lead-Free / RoHS Yes (Pb-free, RoHS compliant) β€”
MSL Level [DATA_NEEDED: MSL rating per JEDEC J-STD-020] 1
Polarity β€” P-Channel
Drain-Source Voltage (VDS) Max β€” -55 V
Continuous Drain Current (ID) at TC=25C β€” 31 A
Continuous Drain Current (ID) at TC=100C β€” [DATA_NEEDED: ID at TC=100C]
On-Resistance (RDS(on)) Max at VGS=-10V β€” 65 mOhm
Gate-Source Threshold Voltage (VGS(th)) β€” -2 V to -4 V
Gate Charge (Qg) Typ β€” [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C β€” 110 W
Single-Pulse Avalanche Energy (EAS) β€” 270 mJ
Operating Temperature Range β€” -55 C to +175 C
RoHS Status β€” Compliant (Pb-free PBF suffix)
Lead-Free Finish β€” Yes (PBF suffix)

Datasheets & Resources

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