IRLR2705TRPBF vs IRLR2905TRPBF Comparison
Detailed side-by-side comparison of IRLR2705TRPBF by Infineon and IRLR2905TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR2705TRPBF | IRLR2905TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.61 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 28 A | 42 A |
| Continuous Drain Current (ID) at TA=25C | [DATA_NEEDED: ID at TA=25C with 1in2 copper] | β |
| RDS(on) Max at VGS=10V | 40 mOhm | β |
| RDS(on) Max at VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | β |
| Gate-to-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute max, +/-V] | β |
| Gate Threshold Voltage (VGS(th)) | Logic-Level (compatible with 4V drive) | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | 16.7 nC | β |
| Power Dissipation (PD) at Tc=25C | 68 W | 110 W |
| Power Dissipation (PD) at TA=25C | [DATA_NEEDED: PD at TA=25C with 1in2 copper] | β |
| Operating Junction Temperature | -55C to +175C | -55C to +175C |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET generation 5) | HEXFET (IR MOSFET, fifth generation) |
| Avalanche Rated | Yes | Yes |
| Lead-Free / RoHS | Yes (Pb-free, RoHS compliant) | Yes / Compliant |
| MSL Level | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] | [DATA_NEEDED: MSL rating] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | β | 27 mOhm |
| Gate Charge (Qg) | β | 32 nC |
| Gate Drive | β | Logic-level compatible |