IRLR2905TRPBF vs IRF640NPBF Comparison
Detailed side-by-side comparison of IRLR2905TRPBF by Infineon and IRF640NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR2905TRPBF | IRF640NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.25 |
| FET Type | N-Channel MOSFET | N-Channel |
| Technology | HEXFET (IR MOSFET, fifth generation) | HEXFET (5th Generation) |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 42 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | β |
| On-Resistance RDS(on) max @ VGS=10V | 27 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Gate Charge (Qg) | 32 nC | β |
| Power Dissipation (PD) at Tc=25C | 110 W | β |
| Operating Junction Temperature | -55C to +175C | -55 C to +150 C |
| Package | TO-252AA (DPAK), surface mount | TO-220AB (through-hole) |
| Mounting Type | Surface Mount | Through-Hole (TO-220 tab) |
| Avalanche Rated | Yes | β |
| Lead-Free / RoHS | Yes / Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Gate Drive | Logic-level compatible | β |
| Continuous Drain Current (ID) at Tc | β | 18 A |
| Power Dissipation (PD) at Tc | β | 150 W |
| On-Resistance RDS(on) max at VGS=10V | β | 150 mOhm |
| Total Gate Charge (Qg) | β | 44.7 nC |
| Gate-to-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Avalanche Energy Rated | β | Yes |
| dv/dt Ruggedness | β | Yes (dynamic rated) |
| Configuration | β | Single N-Channel MOSFET |
| RoHS Status | β | Compliant (PBF suffix) |
| Lead Finish | β | Lead-free (PBF) |
| Pin Count | β | 3 (Gate, Drain, Source) |