IRLR3114ZTRPBF vs IRLR3636TRLPBF Comparison

Detailed side-by-side comparison of IRLR3114ZTRPBF by Infineon and IRLR3636TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLR3114ZTRPBF IRLR3636TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.74
Transistor Type N-Channel MOSFET
Technology HEXFET (IR MOSFET) IR HEXFET® (IR MOSFET™)
Drain-Source Voltage (VDS) 40 V
Continuous Drain Current (ID, Tc=25 C) 42 A
Continuous Drain Current (ID, Tc=100 C) 30 A
Pulsed Drain Current (IDM) 130 A [DATA_NEEDED: IDM rating]
Gate-Source Voltage (VGS) max 16 V
Gate Threshold Voltage (VGS(th)) 2.5 V (typ) 1.0 V to 2.5 V (logic-level)
On-Resistance RDS(on) max @ VGS=10V 4.5 mOhm
On-Resistance RDS(on) @ VGS=4.5V 4.9 mOhm
Total Gate Charge (Qg) 40 nC @ VGS=4.5 V
Input Capacitance (Ciss) 3.81 nF
Power Dissipation (Pd, Tc=25 C) 140 W
Operating Junction Temperature -55 C to +175 C
Package TO-252AA (DPAK) surface mount TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Number of Pins 3 (2 + tab)
RoHS Status Compliant
FET Type N-Channel MOSFET
Drain-to-Source Voltage (VDS) 60 V
Continuous Drain Current (ID, TC=25°C) 50 A
Continuous Drain Current (ID, TC=100°C) 32 A [DATA_NEEDED: exact TC=100°C ID rating]
RDS(on) Max @ VGS=10V 6.8 mΩ
Gate-to-Source Voltage (VGS) Max ±20 V
Total Gate Charge (QG) 33 nC
Power Dissipation (PD, TC=25°C) 143 W
Operating Temperature Range -55 °C to +175 °C (TJ)
Lead-Free / RoHS Yes (PBF suffix)
Avalanche Rated Yes (per Infineon datasheet family)

Datasheets & Resources

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