IRLR3410TRPBF vs IRFR3710ZTRPBF Comparison
Detailed side-by-side comparison of IRLR3410TRPBF by Infineon and IRFR3710ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR3410TRPBF | IRFR3710ZTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.42 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (IR MOSFET, 5th generation) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (Vdss) | 100 V | β |
| Continuous Drain Current (Id) at Tc=25C | 17 A | β |
| Power Dissipation (Pd) at Tc=25C | 79 W | β |
| On-Resistance RDS(on) max | 105 mOhm | β |
| Gate Threshold Voltage Vgs(th) | Logic-level (drive ~4.5V) | β |
| Total Gate Charge (Qg) | 22.7 nC | β |
| Package | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Lead-Free / RoHS | Yes (PBF suffix) | β |
| MSL Level | 1 (unlimited floor life at <30C/85% RH) | β |
| Drain Tab Connection | Tab electrically tied to Drain | β |
| Polarity | N-Channel enhancement mode | β |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25C | β | 56 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed IDM] |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | β | 18 mOhm |
| Power Dissipation (PD) at TC=25C | β | 140 W |
| Operating Junction Temperature | β | -55C to +175C |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |