IRLR3410TRPBF vs IRFZ48NSTRLPBF Comparison

Detailed side-by-side comparison of IRLR3410TRPBF by Infineon and IRFZ48NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLR3410TRPBF IRFZ48NSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.81 $1.18
FET Type N-Channel N-Channel Power MOSFET
Technology HEXFET (IR MOSFET, 5th generation) β€”
Drain-Source Voltage (Vdss) 100 V β€”
Continuous Drain Current (Id) at Tc=25C 17 A β€”
Power Dissipation (Pd) at Tc=25C 79 W β€”
On-Resistance RDS(on) max 105 mOhm β€”
Gate Threshold Voltage Vgs(th) Logic-level (drive ~4.5V) β€”
Total Gate Charge (Qg) 22.7 nC 54 nC
Package TO-252AA (DPAK), surface mount D2PAK (TO-263) Surface Mount
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (junction) β€”
Lead-Free / RoHS Yes (PBF suffix) β€”
MSL Level 1 (unlimited floor life at <30C/85% RH) β€”
Drain Tab Connection Tab electrically tied to Drain β€”
Polarity N-Channel enhancement mode β€”
Drain-to-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) @ Tc=25C β€” 64 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Static Drain-to-Source On-Resistance (Rds(on)) β€” 14 mΞ© at VGS = 10 V
Gate-to-Source Threshold Voltage (VGS(th)) β€” 2.0 V to 4.0 V
Gate-to-Source Voltage (VGS) max β€” Β±20 V
Power Dissipation (Pd) @ Tc=25C β€” 130 W
Power Dissipation (Pd) @ Ta=25C on FR-4 β€” 3.8 W
Operating Junction Temperature β€” -55C to +175C
Packaging β€” Tape & Reel (13-inch reel, TRL)
Lead Finish β€” Lead-free (PBF) matte tin
RoHS Status β€” Compliant
Technology Family β€” HEXFET advanced process technology

Datasheets & Resources

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