IRLR3410TRPBF vs IRLR3636TRLPBF Comparison
Detailed side-by-side comparison of IRLR3410TRPBF by Infineon and IRLR3636TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR3410TRPBF | IRLR3636TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.74 |
| FET Type | N-Channel | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET, 5th generation) | IR HEXFET® (IR MOSFET™) |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Power Dissipation (Pd) at Tc=25C | 79 W | — |
| On-Resistance RDS(on) max | 105 mOhm | — |
| Gate Threshold Voltage Vgs(th) | Logic-level (drive ~4.5V) | — |
| Total Gate Charge (Qg) | 22.7 nC | — |
| Package | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | -55 °C to +175 °C (TJ) |
| Lead-Free / RoHS | Yes (PBF suffix) | Yes (PBF suffix) |
| MSL Level | 1 (unlimited floor life at <30C/85% RH) | — |
| Drain Tab Connection | Tab electrically tied to Drain | — |
| Polarity | N-Channel enhancement mode | — |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, TC=25°C) | — | 50 A |
| Continuous Drain Current (ID, TC=100°C) | — | 32 A [DATA_NEEDED: exact TC=100°C ID rating] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM rating] |
| RDS(on) Max @ VGS=10V | — | 6.8 mΩ |
| Gate-to-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic-level) |
| Total Gate Charge (QG) | — | 33 nC |
| Power Dissipation (PD, TC=25°C) | — | 143 W |
| Avalanche Rated | — | Yes (per Infineon datasheet family) |