IRLR3636TRLPBF vs IRLR3114ZTRPBF Comparison

Detailed side-by-side comparison of IRLR3636TRLPBF by Infineon and IRLR3114ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLR3636TRLPBF IRLR3114ZTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.74 $0.46
FET Type N-Channel MOSFET
Technology IR HEXFET® (IR MOSFET™) HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 60 V
Continuous Drain Current (ID, TC=25°C) 50 A
Continuous Drain Current (ID, TC=100°C) 32 A [DATA_NEEDED: exact TC=100°C ID rating]
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM rating] 130 A
RDS(on) Max @ VGS=10V 6.8 mΩ
Gate-to-Source Voltage (VGS) Max ±20 V
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic-level) 2.5 V (typ)
Total Gate Charge (QG) 33 nC
Power Dissipation (PD, TC=25°C) 143 W
Operating Temperature Range -55 °C to +175 °C (TJ)
Package TO-252AA (DPAK) TO-252AA (DPAK) surface mount
Mounting Type Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix)
Avalanche Rated Yes (per Infineon datasheet family)
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V
Continuous Drain Current (ID, Tc=25 C) 42 A
Continuous Drain Current (ID, Tc=100 C) 30 A
Gate-Source Voltage (VGS) max 16 V
On-Resistance RDS(on) max @ VGS=10V 4.5 mOhm
On-Resistance RDS(on) @ VGS=4.5V 4.9 mOhm
Total Gate Charge (Qg) 40 nC @ VGS=4.5 V
Input Capacitance (Ciss) 3.81 nF
Power Dissipation (Pd, Tc=25 C) 140 W
Operating Junction Temperature -55 C to +175 C
Number of Pins 3 (2 + tab)
RoHS Status Compliant

Datasheets & Resources

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