IRLR3636TRPBF vs IRLR7843TRPBF Comparison
Detailed side-by-side comparison of IRLR3636TRPBF by Infineon and IRLR7843TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR3636TRPBF | IRLR7843TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.38 | $0.48 |
| FET Type | N-Channel MOSFET, Metal Oxide | β |
| Drain-to-Source Voltage (V_DSS) | 60 V | β |
| Continuous Drain Current (I_D) at T_C = 25C | 50 A | β |
| Continuous Drain Current (I_D) at T_C = 100C | [DATA_NEEDED: I_D at 100C] | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum R_DS(on) at V_GS = 10V | 6.8 mOhm | β |
| Typical R_DS(on) at V_GS = 10V | 5.4 mOhm | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) range] | β |
| Total Gate Charge (Q_G) | 33 nC | β |
| Maximum Power Dissition (P_D) at T_C = 25C | 143 W | β |
| Operating Temperature Range | -55C to +175C | -55C to +175C |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR HEXFET / IR MOSFET | HEXFET |
| RoHS Status | Compliant | β |
| Lead-Free | Yes (PBF suffix) | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (Vdss) | β | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | β | 161 A |
| Power Dissipation (Pd) @ Tc=25C | β | 140 W |
| On-Resistance Rds(on) Max @ Vgs=10V | β | 3.3 mOhm |
| On-Resistance Rds(on) Max @ Vgs=4.5V | β | 4.5 mOhm (typ) |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | β | 34 nC |
| Gate-to-Source Voltage Max | β | Β±20 V |
| Avalanche Energy (Eas) | β | Fully characterized |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free) |