IRLR3636TRPBF - 60V 50A N-Ch HEXFET MOSFET, DPAK | Infineon
MPN: IRLR3636TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.28 | $4.28 |
| 10 | $3.85 | $38.50 |
| 100 | $3.42 | $342.00 |
| 500 | $3.05 | $1,525.00 |
| 1,000 | $2.71 | $2,710.00 |
| 3,000 | $2.38 | $7,140.00 |
IRLR3636TRPBF Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate electrode to modulate majority-carrier conduction between the drain and source terminals. In the broader component taxonomy, the IRLR3636TRPBF belongs to the power MOSFET family, which sits within discrete semiconductors, alongside IGBTs, thyristors, and GaN/SiC FETs. HEXFET technology specifically refers to Infineon's (formerly International Rectifier's) hexagonal-cell DMOS architecture, which maximizes channel width per unit silicon area to minimize on-state resistance while keeping die size compact for surface-mount power packages.
Key electrical characteristics include a maximum drain-to-source voltage (V_DSS) of 60V, continuous drain current of 50A at T_C = 25°C, pulsed drain current capability, and avalanche-rated single-pulse ruggedness. The device is fully characterized for both hard-switched and soft-switched topologies, with specified R_DS(on), gate charge (Q_G = 33 nC), and reverse recovery charge (Q_rr) data enabling accurate loss budgeting in synchronous rectification and DC motor drive circuits.
Typical applications include DC motor drive circuits, high-efficiency synchronous rectification in switched-mode power supplies (SMPS), uninterruptible power supply (UPS) battery switches, high-speed power switching in telecom and server DC-DC converters, and hard-switched half-bridge or full-bridge stages. The TO-252AA (DPAK) package's low thermal resistance and exposed tab allow direct PCB heatsinking via copper pour, eliminating the need for an external heatsink in many 3-5W designs.
When designing with the IRLR3636TRPBF, ensure the gate drive voltage reaches at least 10V for full enhancement, place the gate resistor close to the device to suppress parasitic ringing, and verify that the SOA curve at the chosen V_DS and I_D operating point stays within the DC line for continuous operation. For drop-in alternatives, consider Infineon's IRLR3636TRLPBF (same die, different reel orientation), AUIRLR3636 (AEC-Q101 automotive grade), or VBsemi VBE1606 (Chinese cross-brand equivalent in the same TO-252 package).
This page synthesizes distributor pricing, drop-in alternatives sourced from cross-reference databases, and practical design notes that complement - but do not replace - the manufacturer datasheet. Designers should always confirm thermal, avalanche, and SOA parameters against the official Infineon datasheet before final qualification.
Drop-in alternatives for IRLR3636TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRLR3636TRPBF (same form factor and footprint) — differing in FET Type, Technology, Package, Operating Temperature Range, Drain-to-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRLR3636TRLPBF
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →AUIRLR3636
✅ Drop-In📋 Reference alternative (not in catalog)
IRLR3636PBF
✅ Drop-In📋 Reference alternative (not in catalog)
VBE1606
✅ Drop-In📋 Reference alternative (not in catalog)
IRLR3636TRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (V_DSS) | 60 V |
| Continuous Drain Current (I_D) at T_C = 25C | 50 A |
| Maximum R_DS(on) at V_GS = 10V | 6.8 mOhm |
| Typical R_DS(on) at V_GS = 10V | 5.4 mOhm |
| Total Gate Charge (Q_G) | 33 nC |
| Maximum Power Dissition (P_D) at T_C = 25C | 143 W |
| Operating Temperature Range | -55C to +175C |
| Package | TO-252AA (DPAK) |
| Mounting Type | Surface Mount |
| Technology | IR HEXFET / IR MOSFET |
| RoHS Status | Compliant |
| Lead-Free | Yes (PBF suffix) |
IRLR3636TRPBF Pin Configuration
| Pin 1 | GATE — Gate drive input (V_GS) |
| Pin 2 | DRAIN — Drain terminal (connected to tab) |
| Pin 3 | SOURCE — Source terminal |
| Pin TAB | DRAIN — Drain terminal (electrically connected to pin 2, provides thermal dissipation) |
Safe Operating Area (DC, T_C = 25C)
Typical Applications
IRLR3636TRPBF is suitable for 6 applications: DC Motor Drive (H-Bridge), Synchronous Rectification in SMPS, Uninterruptible Power Supply (UPS) Battery Switch, High-Side Load Switch in Telecom 48V Systems, Hard-Switched Half-Bridge DC-DC Converter, Automotive 12V Load Switching (Infotainment, Body Control).
DC Motor Drive (H-Bridge)
The IRLR3636TRPBF's 60V V_DSS, 50A continuous drain current at T_C = 25C, and 6.8 mOhm R_DS(on) make it a strong fit for low-voltage brushed DC motor drive H-bridges in industrial automation, robotics, and electric vehicle accessories. In a typical half-bridge the part sits between the 24V bus and the motor winding; its HEXFET technology delivers low conduction loss so efficiency stays high even at 20-30A continuous load. The 33 nC gate charge enables PWM switching frequencies up to 50 kHz with standard gate drivers, while the DPAK package dissipates heat through PCB copper pour, eliminating the heatsink in many sub-5W designs.
Recommended
Synchronous Rectification in SMPS
In 12V and 24V switched-mode power supplies, the IRLR3636TRPBF serves as the low-side synchronous rectifier replacing a Schottky diode, cutting conduction loss by more than half thanks to its 6.8 mOhm R_DS(on). The 60V V_DSS rating provides comfortable margin for 24V rectified bus rails and ringing transients. Designers place the MOSFET across the secondary winding return path and drive its gate synchronously with the primary-side PWM controller. Compared to a Schottky diode approach, synchronous rectification with the IRLR3636TRPBF typically improves full-load efficiency by 2-4%, a critical gain for 80 PLUS Gold and Platinum power supply designs.
Recommended
Uninterruptible Power Supply (UPS) Battery Switch
The IRLR3636TRPBF functions as the main battery disconnect switch in 12V/24V UPS modules, where its 50A current rating supports 600W-1200W load transfer and its 60V V_DSS provides headroom for transient surges during inverter startup. In normal operation the MOSFET is fully enhanced to minimize voltage drop and power dissipation; during a power-loss event the gate drive is removed within microseconds to disconnect the battery and prevent reverse discharge. The HEXFET die's avalanche rating (per Infineon datasheet) allows the device to absorb inductive kickback from the battery wiring inductance, improving overall UPS reliability.
Recommended
High-Side Load Switch in Telecom 48V Systems
For telecom and networking 48V backplane applications, the IRLR3636TRPBF acts as a high-side load switch disconnecting sub-modules for power budgeting and hot-swap control. The 60V V_DSS rating provides the required 20% margin above the 48V nominal bus including transient ringing. Its 6.8 mOhm R_DS(on) keeps voltage drop below 340 mV at 50A, well within telecom load-voltage tolerance. Combined with a hot-swap controller, the IRLR3636TRPBF supports inrush-current limiting, fault isolation, and OR-ing between redundant 48V feeds in data-center power distribution architectures.
Recommended
Hard-Switched Half-Bridge DC-DC Converter
The IRLR3636TRPBF operates as the low-side switch in hard-switched half-bridge DC-DC converters used in server and telecom point-of-load (POL) regulators. Its 33 nC total gate charge minimizes driver losses, while the 6.8 mOhm R_DS(on) keeps conduction losses low at high duty cycles. Designers pair it with a complementary high-side MOSFET (e.g., IRLR3636TRPBF used symmetrically) and drive both gates from a dedicated half-bridge driver such as the IR2110 or Infineon 1EDN7550. The TO-252 package's low thermal resistance allows continuous operation at 5-8A per switch with only a moderate PCB copper pour as the heatsink.
Recommended
Automotive 12V Load Switching (Infotainment, Body Control)
For automotive 12V body and infotainment applications, the IRLR3636TRPBF (or its AEC-Q101-qualified sibling AUIRLR3636) controls high-current loads such as seat heaters, window regulators, LED lighting drivers, and audio amplifier power supplies. The 60V V_DSS provides comfortable margin against 12V load-dump transients that can spike to 35-40V on automotive buses. With 6.8 mOhm R_DS(on), a 30A continuous load dissipates about 6W, easily managed by the DPAK's exposed tab and a 1 square inch copper pour. Designers add TVS protection across drain-source to absorb avalanche energy from inductive loads like solenoids and motors.
Recommended
Recommended Products Summary
Engineering reference data for IRLR3636TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLR3636TRLPBF | AUIRLR3636 | IRLR3636PBF | VBE1606 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Drain-to-Source Voltage (V_DSS) | 60 V | 60 V | 60 V | 60 V | 60 V |
Key Differentiators
- 60V V_DSS with 6.8 mOhm R_DS(on) - best-in-class figure of merit for 24V bus applications (vs VBE1606)
- Automotive-grade variant available with identical pinout (vs AUIRLR3636)
- Multiple lead-free packaging variants for flexible assembly (vs IRLR3636TRLPBF)
Design Notes
At 30A continuous load with R_DS(on) = 6.8 mOhm, the IRLR3636TRPBF dissipates roughly 6.1W of heat. Estimated: with the DPAK's R_thetaJA of approximately 50 C/W on a 1 square inch copper pour, the junction temperature rise is about 30C above ambient, so for 25C ambient T_J = 55C - well within the 175C maximum. For sustained 40-50A loads, increase PCB copper area to 3-4 square inches or add a small clip-on heatsink to keep T_J below 125C for longest reliability.
Use the standard DPAK land pattern with a minimum copper pour of 1 square inch (645 mm^2) on the drain tab for proper heat dissipation. Place the gate drive resistor (typically 10-22 ohm) within 5 mm of the gate pin to suppress parasitic ringing caused by the MOSFET's input capacitance and source-lead inductance. Add a 100 kohm gate-to-source pull-down resistor to keep the device off during controller power-up and prevent false turn-on from dV/dt transients on the drain.
Do not operate the IRLR3636TRPBF below V_GS = 10V in high-current paths - the R_DS(on) rises sharply (to ~12 mOhm at V_GS = 4.5V), doubling conduction loss and risking thermal runaway. Do not exceed V_DS = 60V under any transient condition; add a TVS diode or RC snubber across drain-source if the design includes inductive loads (motors, transformers). Finally, respect the avalanche rating from the datasheet - the device can absorb limited avalanche energy, but repetitive avalanche events degrade reliability.
Compliance Information
RoHS and lead-free confirmed by PBF suffix and Infineon product page. AEC-Q101 grade available in AUIRLR3636 variant (not the standard TRPBF part). Halogen-free status not explicitly stated in verified web data.
