IRLU024NPBF vs IRFR9024NTRPBF Comparison
Detailed side-by-side comparison of IRLU024NPBF by Infineon and IRFR9024NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRLU024NPBF
IRLU024NPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon
IRLU024NPBF β ActiveSpecification Comparison
| Parameter | IRLU024NPBF | IRFR9024NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.17 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRLU024NPBF | β |
| FET Type | N-Channel, Logic-Level | β |
| Technology | HEXFET Power MOSFET (5th generation) | HEXFET (Gen 5) |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at TC=25C | 17 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-Resistance RDS(on) max at VGS=10V | 65 mOhm | β |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | β |
| Total Gate Charge (Qg) | 10 nC (typical, per listing) | 12.7 nC |
| Power Dissipation (PD) at TC=25C | 45 W | β |
| Thermal Resistance Junction-to-Case (RthJC) | 3.3 C/W | β |
| Thermal Resistance Junction-to-Ambient (RthJA) | 110 C/W (50 C/W PCB-mounted) | β |
| Operating Junction Temperature | -55C to +175C | -55C to +175C |
| Package | IPAK (TO-251AA), Through Hole | TO-252AA (DPAK) |
| Mounting Type | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free plating) | β |
| Qualification | JEDEC standard | β |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | β |
| Polarity | β | P-Channel |
| VDS (Drain-Source Voltage) | β | -55 V |
| Continuous Drain Current (Tc=25C) | β | -11 A |
| Pulsed Drain Current | β | [DATA_NEEDED: pulsed drain current] |
| VGS (Gate-Source Voltage) | β | Β±20 V |
| VGS(th) (Threshold Voltage) | β | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) Max at VGS=-10V | β | 175 mOhm |
| Maximum Power Dissipation (Tc=25C) | β | 38 W |
| Pin Count | β | 3 |
| RoHS Status | β | Compliant |