IRLZ34NPBF vs IRLZ44NPBF Comparison
Detailed side-by-side comparison of IRLZ34NPBF by Infineon and IRLZ44NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLZ34NPBF | IRLZ44NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.68 |
| Manufacturer | Infineon (formerly International Rectifier) | β |
| Part Number Suffix | PBF = Lead-free (Pb-free), Tube packaging | β |
| Transistor Type | N-Channel HEXFET Power MOSFET | β |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25 C | 30 A | β |
| Continuous Drain Current (ID) at Tc=100 C | [DATA_NEEDED: ID at Tc=100 C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 160 A |
| On-Resistance Rds(on) max @ VGS=10 V | 35 mOhm | β |
| On-Resistance Rds(on) max @ VGS=5 V | [DATA_NEEDED: Rds(on) at VGS=5 V] | β |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (logic-level) | β |
| Total Gate Charge (Qg) | 16.7 nC (typical) | 32 nC |
| Power Dissipation (PD) at Tc=25 C | 68 W | β |
| Operating Junction Temperature | -55 C to +175 C | -55 Β°C to +175 Β°C |
| Package | TO-220AB (through-hole, 3 leads + tab) | TO-220AB (through-hole, 3 leads) |
| Mounting Type | Through Hole | Through Hole |
| RoHS Status | Compliant (Pb-free PBF suffix) | Compliant |
| MSL Level | Not applicable (through-hole) | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TC=25Β°C | β | 47 A |
| Gate-to-Source Voltage (VGS) Max | β | Β±16 V |
| Gate Threshold Voltage (VGS(th)) | β | 1.0 V to 2.0 V (typ 1.5 V) |
| Static Drain-to-Source On-Resistance (RDS(on)) | β | 22 mΞ© max at VGS=5V, ID=25A |
| Power Dissipation (PD) at TC=25Β°C | β | 110 W |
| Power Dissipation (PD) at TA=25Β°C | β | 3.8 W |
| Thermal Resistance Junction-to-Case (RΞΈJC) | β | 1.4 Β°C/W |
| Technology | β | HEXFET (advanced process) |
| Logic-Level Gate Drive | β | Yes (fully enhanced at VGS=5V) |