IRLZ44NPBF vs IRL540NPBF Comparison
Detailed side-by-side comparison of IRLZ44NPBF by Infineon and IRL540NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLZ44NPBF | IRL540NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.86 |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 55 V | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | 47 A | β |
| Pulsed Drain Current (IDM) | 160 A | 130 A (pulsed) |
| Gate-to-Source Voltage (VGS) Max | Β±16 V | β |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (typ 1.5 V) | 1 V to 2 V (logic level) |
| Static Drain-to-Source On-Resistance (RDS(on)) | 22 mΞ© max at VGS=5V, ID=25A | β |
| Total Gate Charge (Qg) | 32 nC | 49.3 nC |
| Power Dissipation (PD) at TC=25Β°C | 110 W | β |
| Power Dissipation (PD) at TA=25Β°C | 3.8 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RΞΈJC) | 1.4 Β°C/W | β |
| Package | TO-220AB (through-hole, 3 leads) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Technology | HEXFET (advanced process) | HEXFET (Planar DMOS) |
| Logic-Level Gate Drive | Yes (fully enhanced at VGS=5V) | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon (formerly International Rectifier) |
| Part Number | β | IRL540NPBF |
| Transistor Type | β | N-Channel MOSFET |
| Gate-to-Source Voltage (VGS) max | β | +/-16 V |
| Continuous Drain Current (ID) at Tc=25C | β | 36 A |
| On-Resistance RDS(on) max | β | 44 mOhm at VGS=5V |
| Power Dissipation (PD) at Tc=25C | β | 140 W |
| Lead-Free | β | Yes (PBF suffix) |