ISC011N03L5SATMA1 vs IAUCN04S6N009TATMA1 Comparison

Detailed side-by-side comparison of ISC011N03L5SATMA1 by Infineon and IAUCN04S6N009TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC011N03L5SATMA1

ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 βœ“ Active
Infineon
IAUCN04S6N009TATMA1

IAUCN04S6N009TATMA1 - 40V 0.9mΞ© OptiMOS 6 Auto MOSFET | Infineon

IAUCN04S6N009TATMA1 βœ“ Active

Specification Comparison

Parameter ISC011N03L5SATMA1 IAUCN04S6N009TATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.47 $1.71
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 / StrongIRFET 30 V β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) @ Ta=25C 37 A β€”
Continuous Drain Current (ID) @ Tc=25C 100 A β€”
Power Dissipation (PD) @ Ta=25C 2.5 W β€”
Power Dissipation (PD) @ Tc=25C 96 W β€”
Package PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) PG-LHDSO-10-2 (SSO10T)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 C to +175 C (TJ) β€”
Technology OptiMOS 5 trench MOSFET OptiMOS 6 trench MOSFET
Gate Drive Logic-level compatible β€”
RoHS Status Compliant β€”
MSL Level 1 (per JEDEC J-STD-020) β€”
Part Family β€” OptiMOS 6 40 V
Part Number β€” IAUCN04S6N009T
Ordering Code (MPN) β€” IAUCN04S6N009TATMA1
Channel Type β€” N-Channel
Continuous Drain Current (ID, at Tj) β€” 330 A
Power Dissipation (PD, at Tc) β€” 178 W
On-Resistance RDS(on) max β€” 0.9 mΞ©
Automotive Qualification β€” AEC-Q101
Lead-Free / RoHS β€” Yes / Compliant
Gate Threshold VGS(th) typ β€” [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Qg typ β€” [DATA_NEEDED: total gate charge]

Datasheets & Resources

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