ISC011N04NM7VATMA1 vs BSC018NE2LSATMA1 Comparison
Detailed side-by-side comparison of ISC011N04NM7VATMA1 by Infineon and BSC018NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β Active
Specification Comparison
| Parameter | ISC011N04NM7VATMA1 | BSC018NE2LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.78 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 7 Power-Transistor | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 25 V |
| Continuous Drain Current (ID) at TA=25Β°C | 38 A | β |
| Continuous Drain Current (ID) at TC | 256 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΞ© | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 136 W | β |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | β |
| Technology | Trench MOSFET, silicon | OptiMOS 25V (Trench) |
| Package | PG-TDSON-8 (source-down) | PG-TDSON-8-1 (8-PowerTDFN) |
| Mounting Type | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | -55Β°C to +150Β°C (TJ) |
| RoHS Compliance | Compliant (per Infineon product page) | β |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Continuous Drain Current (ID, Tc) | β | 100 A |
| Continuous Drain Current (ID, Ta) | β | 29 A |
| On-Resistance RDS(on) @ VGS=10V | β | 1.8 mΞ© (typical) |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Charge (Qg) | β | 39 nC @ VGS=10V |
| Output Capacitance (Coss) | β | 2800 pF @ VDS=12V |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 69 W |
| RoHS Status | β | Compliant |