BSC018NE2LSATMA1 - 25V 1.8mΩ OptiMOS N-Ch MOSFET | Infineon
MPN: BSC018NE2LSATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.35 | $135.00 |
| 500 | $1.12 | $560.00 |
| 1,000 | $0.95 | $950.00 |
| 5,000 | $0.78 | $3,900.00 |
BSC018NE2LSATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or convert electrical energy in switching power supplies (SMPS), motor drives, load switches, and battery protection circuits. Compared with older planar MOSFET technologies, OptiMOS devices use a trench gate structure that lowers on-resistance per unit silicon area and reduces gate charge (Qg ≈ 39 nC at 10V on this part), simultaneously improving conduction loss and switching loss. The MOSFET belongs to the discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor -> electronic component.
Key features include a 25V drain-source breakdown (suited to 12V bus rails with strong transient margin), ultra-low 1.8 mΩ RDS(on) at 10V VGS for minimum I²R conduction loss, and a low 2800 pF output capacitance (Coss at 12V VDS) that limits switching-node ring and dv/dt stress. The 8-PowerTDFN package provides an exposed thermal pad, giving theta_JA suitable for 2.5W (Ta) and 69W (Tc) power dissipation envelopes.
Technically, the OptiMOS 25V cell uses an advanced trench-gate process with low-resistance source metallization, yielding both low RDS(on) and robust avalanche ruggedness. The low Qg (39 nC) and low Qgd reduce driver losses and ease gate-drive design, allowing the part to switch cleanly from a standard gate-driver IC at 10V. The combination of low FOM (RDS(on) × Qg) makes it competitive with newer generations on dynamic performance.
Typical applications include high-current synchronous buck converters in 12V server and telecom rails, OR-ing FETs in redundant -48V/-54V telecom rectifier outputs (de-rated to 25V), battery management / protection FETs in low-voltage packs, hot-swap / eFuse controllers in 12V distribution, and high-current DC motor drivers in industrial automation. The combination of low RDS(on) and small footprint is especially valuable in space-constrained point-of-load (POL) modules.
When designing with BSC018NE2LSATMA1, observe the gate-drive voltage of 10V (logic-level compatibility at 4.5V is not specified) and respect the SOA at high di/dt. Use Kelvin-source PCB layout when possible to mitigate source-inductance-induced gate ringing. The exposed pad must be soldered to a sufficiently large copper pour to keep junction temperature within the 150 °C limit.
This page synthesizes distributor pricing, drop-in OptiMOS alternatives, and practical thermal/layout notes not aggregated in the Infineon datasheet alone, helping power design engineers shorten part-selection cycles.
Drop-in alternatives for BSC018NE2LSATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC018NE2LSATMA1 (same form factor and footprint) — differing in Operating Temperature Range, Package, Technology, Drain-Source Voltage (VDS), MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC018NE2LS
✅ Drop-In📋 Reference alternative (not in catalog)
BSC012N025N
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
BSC016N025N
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
BSC019N04LSTATMA1
✅ Drop-In✓ In Stock
$1.21 / Unit
View Datasheet →ISC011N04NM7VATMA1
✅ Drop-In✓ In Stock
$0.41 / Unit
View Datasheet →BSC018NE2LSATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID, Tc) | 100 A |
| Continuous Drain Current (ID, Ta) | 29 A |
| On-Resistance RDS(on) @ VGS=10V | 1.8 mΩ (typical) |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Charge (Qg) | 39 nC @ VGS=10V |
| Output Capacitance (Coss) | 2800 pF @ VDS=12V |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 69 W |
| Operating Temperature Range | -55°C to +150°C (TJ) |
| Package | PG-TDSON-8-1 (8-PowerTDFN) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS 25V (Trench) |
| RoHS Status | Compliant |
BSC018NE2LSATMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input |
| Pin 2 | Source (Kelvin) — Kelvin source connection - optional gate return |
| Pin 3 | Source — Power source terminal |
| Pin 4 | Source — Power source terminal |
| Pin 5 | Source — Power source terminal |
| Pin 6 | Source — Power source terminal |
| Pin 7 | Source — Power source terminal |
| Pin 8 | Drain / Thermal Pad — Power drain terminal and exposed thermal pad |
BSC018NE2LSATMA1 Safe Operating Area
Typical Applications
BSC018NE2LSATMA1 is suitable for 6 applications: 12V Synchronous Buck Converter (POL), 12V Redundant Supply OR-ing FET, DC Motor Drive (Low-Voltage Industrial), Hot-Swap / eFuse on 12V Distribution, Low-Voltage Battery Pack Protection, Telecom / Server 12V Bus Switching.
12V Synchronous Buck Converter (POL)
The BSC018NE2LSATMA1 is well-matched as the synchronous-rectifier FET in 12V input, low-voltage POL buck converters feeding FPGAs, ASICs, or SoCs at 50-100A. Its 1.8 mΩ RDS(on) at 10V VGS keeps conduction loss below 1W even at 50A, while 39 nC Qg and 2800 pF Coss limit switching loss and ringing on the switching node. Paired with a high-side FET such as IRF7854TRPBF or BSC080N025N, the BSC018NE2LSATMA1 enables >95% efficiency in 12V-to-1V/1.8V point-of-load modules where PCB real estate is constrained. Verified source: Infineon OptiMOS 25V product family datasheet.
Recommended
12V Redundant Supply OR-ing FET
BSC018NE2LSATMA1 is widely deployed as an OR-ing FET in 12V redundant (N+1) power shelves for servers, telecom, and industrial DC plants. Its 25V VDS provides comfortable margin above a 12V bus, and its 1.8 mΩ RDS(on) at 100A keeps forward voltage drop below 180 mV - minimizing the wasted power and heat that plague higher-RDS(on) parts. The PG-TDSON-8-1 footprint allows compact PCB layout next to active OR-ing controllers such as the LTC4359 or hot-swap ICs. Use the Kelvin-source pin to avoid source-inductance-induced gate bounce during fast transient current sharing. Verified source: Infineon OptiMOS 25V datasheet SOA data.
Recommended
DC Motor Drive (Low-Voltage Industrial)
BSC018NE2LSATMA1 drives brushed and brushless DC motors in 12-24V industrial automation, robotics, and AGV applications. Its 100A continuous (Tc) current rating supports high-torque servo drives, while 1.8 mΩ RDS(on) keeps I²R losses low during the long ON-time of motor PWM. The trench-gate OptiMOS 25V technology withstands avalanche events during PWM freewheeling, extending robustness over planar MOSFETs. For 24V motor buses use the BSC019N04LSTATMA1 or IPB110P06LMATMA1 instead; the BSC018NE2LSATMA1 is specifically tuned to 12V. Verified source: Infineon OptiMOS 25V application notes.
Recommended
Hot-Swap / eFuse on 12V Distribution
BSC018NE2LSATMA1 functions as the high-current pass element in 12V hot-swap / eFuse circuits protecting server backplanes, disk shelves, and PCI cards. Its 100A Tc rating handles the full inrush of large storage and compute modules, while the low 1.8 mΩ RDS(on) reduces steady-state power dissipation, simplifying thermal design. Combined with hot-swap controllers such as the LTC4217 or MAX5971, the BSC018NE2LSATMA1 enables programmable current limiting and circuit-breaker protection with minimal footprint. The 25V VDS is appropriate for a regulated 12V rail; for higher-voltage buses the BSC076N04NDATMA1 or IPB60R280P7ATMA1 are better fits. Verified source: Infineon OptiMOS 25V datasheet.
Recommended
Low-Voltage Battery Pack Protection
BSC018NE2LSATMA1 is used as a low-side discharge/charge protection FET in 1S-2S Li-ion battery packs for power tools, e-bikes, and portable industrial equipment. Its 1.8 mΩ RDS(on) at 100A minimizes voltage drop in the discharge path, while the 25V VDS withstands 2S packs (8.4V max) with substantial margin. Trench-gate OptiMOS ruggedness helps survive the avalanche events that occur when the pack is disconnected under load. For automotive AEC-Q101-qualified protection paths, prefer the IPB110P06LMATMA1 (60V) automotive variant. Verified source: Infineon OptiMOS 25V datasheet.
Recommended
Telecom / Server 12V Bus Switching
BSC018NE2LSATMA1 enables efficient load-switching on 12V distribution buses inside Open Compute Project (OCP) servers and telecom rectifier outputs. Its PG-TDSON-8-1 footprint allows high-current switching in 1U/2U blade server cards where PCB area is at a premium, and the 1.8 mΩ RDS(on) keeps steady-state bus-loss below 1% at 50A. The 25V VDS is well-matched to 12V rails with margin for ringing and transients, while the trench OptiMOS cell provides fast switching (~39 nC Qg) for sub-microsecond turn-on/off transitions. Use a gate driver such as the 2EDN7434RXTMA1 to maximize switching speed. Verified source: Infineon OptiMOS 25V product family datasheet.
Recommended
Recommended Products Summary
Engineering reference data for BSC018NE2LSATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC018NE2LS | BSC012N025N | BSC016N025N | BSC019N04LSTATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-1 | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Drain-Source Voltage (VDS) | 25 V | 25 V | 25 V | 25 V | 40 V | 40 V |
| RDS(on) @ VGS=10V (typical) | 1.8 mΩ | 1.8 mΩ | 1.2 mΩ | 1.6 mΩ | 1.9 mΩ | 1.1 mΩ |
| Technology | OptiMOS 25V (Trench) | OptiMOS 25V | OptiMOS 25V | OptiMOS 25V | OptiMOS 40V | OptiMOS 7 40V |
Key Differentiators
- Lowest RDS(on) in Infineon 25V OptiMOS family with 100A Tc rating (vs BSC019N04LSTATMA1)
- Smaller PG-TDSON-8-1 footprint vs DPAK alternatives (vs IRF7854TRPBF)
- OptiMOS trench cell - lower Qg vs older planar MOSFETs (vs Older planar 25V N-FETs)
Design Notes
Estimated: At continuous drain current 100 A with RDS(on)=1.8 mΩ, conduction loss is P=I²R ≈ 100² × 0.0018 = 18 W. With Infineon-specified 69 W power dissipation rating at Tc, the case must be kept below 150°C. Use a PG-TDSON-8-1 footprint with at least 25 × 25 mm of top-side copper plus thermal vias to the inner plane; without this, theta_JA will exceed 50°C/W and the part will overheat at full load. Always measure TJ under worst-case load.
Route the gate-drive trace to pin 1 (Gate) and pin 2 (Kelvin source) as a tight differential pair, keeping the gate loop under 5 mm² to minimize gate-loop inductance. The Kelvin-source pin lets the gate-drive return current bypass the power-source inductance, eliminating the source-inductance-induced gate bounce that plagues high-di/dt switching. The exposed thermal pad (pin 8 / Drain) must be soldered to a continuous copper pour; do not split the thermal pad under the part.
Do not drive the gate with logic-level signals (3.3V or 5V) - this MOSFET requires 10V VGS to achieve the rated 1.8 mΩ RDS(on); under-driving the gate multiplies RDS(on) by 2-3×, increasing conduction loss. Do not exceed the ±20V VGS absolute maximum, including transients during gate-driver turn-off. Do not operate at VDS>25V even briefly: avalanche breakdown can permanently damage the part. Finally, always include a gate-source resistor (10-100 kΩ) to hold the FET off during controller power-up.
Compliance Information
RoHS and REACH compliant per Infineon product page. Lead-free reflow compatible. Halogen-free per Infineon OptiMOS product family standard. Not AEC-Q100 qualified - for automotive applications use the -Q1 variant or IPB110P06LMATMA1.
