ISC011N04NM7VATMA1 vs BSC340N08NS3GATMA1 Comparison
Detailed side-by-side comparison of ISC011N04NM7VATMA1 by Infineon and BSC340N08NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveInfineon
BSC340N08NS3GATMA1 - 80V 23A N-Ch OptiMOS 3 MOSFET | Infineon
BSC340N08NS3GATMA1 β ActiveSpecification Comparison
| Parameter | ISC011N04NM7VATMA1 | BSC340N08NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) at TA=25Β°C | 38 A | β |
| Continuous Drain Current (ID) at TC | 256 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΞ© | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 136 W | β |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | β |
| Technology | Trench MOSFET, silicon | OptiMOS 3 (N-Channel Trench) |
| Package | PG-TDSON-8 (source-down) | PG-TDSON-8-5 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | -55C to +150C |
| RoHS Compliance | Compliant (per Infineon product page) | β |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | 1 |
| Part Number | β | BSC340N08NS3GATMA1 |
| Continuous Drain Current (ID, Tc) | β | 23 A |
| Continuous Drain Current (ID, Ta) | β | 7 A |
| Pulsed Drain Current (IDM) | β | 92 A |
| On-State Resistance RDS(on) max @ VGS=10V | β | 34 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage VGS max | β | +/- 20 V |
| Power Dissipation (Tc) | β | 32 W |
| Power Dissipation (Ta) | β | 2.5 W |
| RoHS / Lead-Free | β | RoHS compliant, lead-free |
| Channel Type | β | Single N-Channel |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg typical] |
| Avalanche Rating | β | Repetitive avalanche rated |