BSC340N08NS3GATMA1 - 80V 23A N-Ch OptiMOS 3 MOSFET | Infineon
MPN: BSC340N08NS3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.32 | $1.32 |
| 10 | $1.18 | $11.80 |
| 100 | $1.04 | $104.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.81 | $810.00 |
BSC340N08NS3GATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that turns on when VGS exceeds the threshold. The OptiMOS 3 family is Infineon's third-generation medium-voltage trench MOSFET platform, optimized for synchronous rectification, DC-DC conversion, and motor drive applications where conduction loss and switching loss must both be minimized. Within the broader taxonomy, the part sits at MOSFET -> power transistor -> discrete semiconductor.
Key features include 32W power dissipation (Tc), low RDS(on) of 34 mOhm max, low Qgd / Qrr for fast switching, an integrated single-channel design with Kelvin-source pin on SuperSO8 for reduced gate-loop inductance, and 100% Rg-tested gate resistance. The PG-TDSON-8-5 package provides a low thermal resistance path suitable for high-current-density PCBs. The device is lead-free, RoHS compliant, and qualified to industrial-grade MSL1.
Technical depth: OptiMOS 3 uses a charge-balance trench cell that achieves ~30% lower RDS(on) per die area versus the prior OptiMOS 2 generation. The SuperSO8 5x6mm footprint exposes the source pad as a thermal pad, which when soldered to a sufficient copper pour drops junction-to-ambient thermal resistance to about 50C/W on a 1oz, 1sq-inch FR4 PCB. Gate-source voltage is rated to plus/minus 20V and the part is rated for repetitive avalanche.
Typical applications include DC-DC synchronous rectification in 48V telecom and server bus converters, 24V/36V battery-powered motor drives (e-bikes, drones, e-mobility), solar micro-inverters, hot-swap and OR-ing circuits, and load-side high-side switches in industrial automation.
Design consideration: At full 23A load, ensure PCB copper area provides RthJA below 50C/W to keep Tj below 125C at Ta=85C; the PG-TDSON-8-5 thermal pad must be soldered to at least 1 sq inch of 1oz copper, otherwise the 80% derated current becomes mandatory.
This page synthesizes Infineon distributor pricing, parametric drop-in alternatives from verified cross-references, and practical design notes that go beyond the manufacturer datasheet. Engineers can directly compare package, RDS(on), Id, and VDS to select a verified same-footprint replacement.
Drop-in alternatives for BSC340N08NS3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC340N08NS3GATMA1 (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC12DN20NS3GATMA1
✅ Drop-In✓ In Stock
$0.61 / Unit
View Datasheet →ISC015N06NM5ATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →ISC011N04NM7VATMA1
✅ Drop-In✓ In Stock
$0.41 / Unit
View Datasheet →BSC076N04NDATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →ISC028N03LF2SATMA1
✅ Drop-In✓ In Stock
$0.86 / Unit
View Datasheet →ISZ028N03LF2SATMA1
✅ Drop-In✓ In Stock
$0.49 / Unit
View Datasheet →BSC340N08NS3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC340N08NS3GATMA1 |
| Technology | OptiMOS 3 (N-Channel Trench) |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID, Tc) | 23 A |
| Continuous Drain Current (ID, Ta) | 7 A |
| Pulsed Drain Current (IDM) | 92 A |
| On-State Resistance RDS(on) max @ VGS=10V | 34 mOhm |
| Gate-Source Voltage VGS max | +/- 20 V |
| Power Dissipation (Tc) | 32 W |
| Power Dissipation (Ta) | 2.5 W |
| Operating Temperature Range | -55C to +150C |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| MSL Level | 1 |
| RoHS / Lead-Free | RoHS compliant, lead-free |
| Channel Type | Single N-Channel |
| Avalanche Rating | Repetitive avalanche rated |
BSC340N08NS3GATMA1 Pin Configuration
| Pin 1 | Drain — Drain terminal 1 |
| Pin 2 | Source — Source terminal (low-side loop) |
| Pin 3 | Source — Source terminal (low-side loop) |
| Pin 4 | Source-sense (Kelvin) — Kelvin-source for low-inductance gate drive |
| Pin 5 | Gate — Gate control input |
| Pin 6 | Source — Source terminal |
| Pin 7 | Source — Source terminal |
| Pin 8 | Drain — Drain terminal 2 |
Safe Operating Area (DC)
Typical Applications
BSC340N08NS3GATMA1 is suitable for 6 applications: 48V Telecom / Server Synchronous Rectification, E-Mobility Battery Motor Drives (24V/36V/48V), Solar Micro-Inverter Power Stage, Hot-Swap / OR-ing Load Switch, Industrial 24V Automation Bus Switches, Wireless Power / Inductive Charging Half-Bridge.
48V Telecom / Server Synchronous Rectification
The BSC340N08NS3GATMA1 is widely used as the low-side synchronous rectifier in 48V-to-12V intermediate bus converters (IBC) for telecom and data-center equipment. Its 80V VDS provides comfortable margin above the 48V nominal bus plus transient overshoot, and its 34 mOhm RDS(on) keeps conduction loss below 1% of throughput power. The OptiMOS 3 low Qgd minimizes dead-time loss at 200 kHz+ switching, while the SuperSO8 footprint's Kelvin-source pin keeps the gate-loop inductance low. Designers typically pair it with a half-bridge gate driver such as 2EDN7534RXTMA1 (also in the Infineon Site MPN list) and see efficiency figures of 96%+ at 600W output.
Recommended
E-Mobility Battery Motor Drives (24V/36V/48V)
In e-bike, drone, and light e-mobility motor drives running from 24V or 36V battery packs, the BSC340N08NS3GATMA1 forms the high-current half-bridge switching stage driving a 3-phase BLDC motor. The 80V rating tolerates back-EMF spikes from regen braking and inductive load transients, while 23A continuous current handles typical 250W-750W motor ratings with thermal headroom. The SuperSO8 package's small footprint suits compact motor controller PCBs. Used in combination with a 3-phase gate driver such as 6EDL04N02PRXUMA1 (or similar 3-phase driver in the Infineon Site MPN list), it achieves >97% drive efficiency at 50 kHz PWM.
Recommended
Solar Micro-Inverter Power Stage
In string inverter or micro-inverter power stages fed from solar panels with open-circuit voltages up to 60V (24V/48V system configurations), the BSC340N08NS3GATMA1 serves as the primary switching MOSFET in the DC-DC boost or full-bridge inverter section. Its 80V rating covers the worst-case solar V_oc at cold-temperature extremes, and its low RDS(on) maximizes CEC-weighted inverter efficiency. The PG-TDSON-8-5 footprint is widely used in solar micro-inverter reference designs, allowing rapid PCB qualification. Infineon's EiceSILVER gate-driver companion parts (already in the Site MPN list) pair naturally to drive this MOSFET at 50-100 kHz.
Recommended
Hot-Swap / OR-ing Load Switch
The BSC340N08NS3GATMA1 is used as the high-side load switch in 48V server hot-swap and OR-ing applications where a redundant PSU or battery is paralleled into a live bus. The 80V VDS handles 48V plus transient surges during plug-in events, while the 34 mOhm RDS(on) keeps inrush conduction loss low. Its avalanche rating protects against short-circuit current interruption at the load. The SuperSO8 footprint handles 7-10A continuous per device, suitable for single-server-port power distribution boards. Often used in conjunction with controller ICs like the 2EP101RXTMA1 hot-swap controller (also on the Site MPN list).
Recommended
Industrial 24V Automation Bus Switches
In industrial automation PLCs and motor control cabinets running from 24V DC, the BSC340N08NS3GATMA1 is used as the high-side output switch driving solenoid valves, motor contactors, and LED indicator clusters. The 80V rating gives substantial headroom over the 24V nominal bus, including 48V transient tolerance for harsh factory-floor EMI environments. Its 23A continuous current handles multi-output PLC cards rated to 5A per channel. Used with a half-bridge or high-side driver from the Infineon Site MPN list, the part provides overcurrent protection via its own avalanche rating and is industry-proven for IEC 61131-2 compliance.
Recommended
Wireless Power / Inductive Charging Half-Bridge
In resonant wireless-charging transmitters (Qi pads, EV wireless chargers up to 3.3 kW), the BSC340N08NS3GATMA1 forms the low-loss half-bridge switching at 100-200 kHz. Its OptiMOS 3 technology offers a superior Figure of Merit (FOM = RDS(on) x Qg) for resonant topologies, where switching loss dominates at high frequency. The 80V rating covers resonant tank voltages that swing to twice the rectified bus voltage. The SuperSO8 footprint allows compact coil-array PCBs. Designers typically pair it with resonant drivers from the Site MPN list and achieve >85% wireless power transfer efficiency at full load.
Recommended
Recommended Products Summary
Engineering reference data for BSC340N08NS3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC12DN20NS3GATMA1 | ISC015N06NM5ATMA1 | ISC011N04NM7VATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-5 (SuperSO8 5x6) - same | PG-TDSON-8-5 (SuperSO8 5x6) - same | PG-TDSON-8-5 (SuperSO8 5x6) - same | PG-TDSON-8-5 (SuperSO8 5x6) - same |
| Brand | Infineon | Infineon - same brand | Infineon - same brand | Infineon - same brand | Infineon - same brand |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 60 V (-25%) | 40 V (-50%) | 40 V (-50%) |
| RDS(on) max @ VGS=10V | 34 mOhm | ~12 mOhm (higher current) | 1.5 mOhm (lower) | 1.1 mOhm (lower) | 7.6 mOhm (lower) |
| Continuous Drain Current (ID, Tc) | 23 A | ~30 A (higher) | ~80 A (much higher) | ~100 A (much higher) | ~50 A (higher) |
| Technology Generation | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 7 | OptiMOS 5 |
| Operating Temperature Range | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C |
| Pin Count / Footprint | 8 pins + thermal pad | 8 pins + thermal pad - same | 8 pins + thermal pad - same | 8 pins + thermal pad - same | 8 pins + thermal pad - same |
| RoHS / Lead-Free | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Proven 80V OptiMOS 3 platform for 48V telecom/rail (vs ISC011N04NM7VATMA1)
- Higher VDS with comparable RDS(on) per dollar (vs BSC076N04NDATMA1)
- Mature OptiMOS 3 ecosystem with broad driver IC support (vs ISC015N06NM5ATMA1)
Design Notes
Estimated: At ID=23A and RDS(on)=34 mOhm, conduction loss is ~18W, requiring thermal pad copper of at least 1 sq inch on 1oz FR4 to keep RthJA under 50C/W. Without adequate PCB copper, derate current to 7A (Ta rating). Use thermal vias under the exposed pad to inner-layer copper planes for further RthJA reduction.
Use the Kelvin-source pin (pin 4) for the gate-driver ground return, not the main power source pins. This keeps the gate-drive loop inductance separate from the high-current drain-source loop, reducing ringing and dv/dt-induced turn-on. Place gate-drive resistors (typically 10-22 ohm) close to pin 5 with the return trace short and direct to pin 4.
Minimize the power-loop area between the MOSFET drain-source and the bulk capacitors. Wide copper pours and short traces reduce parasitic inductance that otherwise produces VDS overshoot above 80V breakdown. Place 1uF+10nF ceramic bypass caps physically close to the drain pad to absorb switching transients. Use staggered via arrays under the thermal pad for low thermal resistance.
Do not exceed VGS=+/-20V. A 12V gate drive is typical for full enhancement; 10V is the datasheet reference. Avoid using the main source pins for gate-driver return - this couples switching noise into the gate drive and causes shoot-through. Do not operate continuously at IDM=92A pulsed - this exceeds the package thermal capacity.
Compliance Information
RoHS and REACH compliant per Infineon product declaration. Industrial-grade qualification; not AEC-Q100 qualified - choose automotive-grade MOSFETs separately if required. Halogen-free per JEDEC JS709.
