ISC011N04NM7VATMA1 vs IAUC120N06S5N017ATMA1 Comparison

Detailed side-by-side comparison of ISC011N04NM7VATMA1 by Infineon and IAUC120N06S5N017ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 ✓ Active

Specification Comparison

Parameter ISC011N04NM7VATMA1 IAUC120N06S5N017ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.41 $1.32
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor
FET Type N-Channel N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID) at TA=25°C 38 A
Continuous Drain Current (ID) at TC 256 A
On-Resistance RDS(on) max @ VGS=10V 1.1 mΩ
Power Dissipation (TA) 3 W
Power Dissipation (TC) 136 W
Gate Threshold Voltage (Vth) Up to 3.2 V
Technology Trench MOSFET, silicon
Package PG-TDSON-8 (source-down) PG-TDSON-8-43 (TDSON-8 EP)
Mounting Type Surface Mount Surface Mount
Short-Circuit Withstand Yes (current-limited)
Operating Temperature Range -55 °C to +175 °C (TJ) -55°C to +175°C
RoHS Compliance Compliant (per Infineon product page) Green Product (RoHS compliant)
MSL Level MSL 1 (per JEDEC J-STD-020) MSL1 (260°C peak reflow)
Series OptiMOS 5
Continuous Drain Current (ID, Tc=25°C) 120 A
Pulsed Drain Current (IDM) 757 A
RDS(on) at VGS=10V 1.7 mΩ
Gate-Source Threshold Voltage (VGS(th)) 3.4 V (typ)
Total Gate Charge (Qg) at VGS=10V 95.9 nC
Input Capacitance (Ciss) 6.952 nF
Reverse Transfer Capacitance (Crss) 84 pF
Output Capacitance (Coss) 1.507 nF
Power Dissipation (PD, Tc=25°C) 167 W
AEC-Q101 Qualification Yes (Automotive Grade)

Datasheets & Resources

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