ISC015N04NM5ATMA1 vs BSC015NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of ISC015N04NM5ATMA1 by Infineon and BSC015NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC015NE2LS5IATMA1
BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon
BSC015NE2LS5IATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N04NM5ATMA1 | BSC015NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.69 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 40V Normal Level | β |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 5 trench |
| Drain-Source Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | 3.4 V (typ) | β |
| R_DS(on) max | 1.5 mOhm @ VGS=10 V, ID=50 A | β |
| Continuous Drain Current (ID) at Ta=25C | 33 A | β |
| Continuous Drain Current (ID) at Tc=25C | 206 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 115 W | β |
| Operating Temperature Range | -55 C to +175 C (junction, per OptiMOS 5) | -55C to +150C (junction) |
| Package / Case | PG-TDSON-8 FL (SuperSO8 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | 8 |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per Infineon SuperSO8 family) | 1 (per JEDEC J-STD-020) |
| Drive Level | Normal Level (VGS(th) ~3.4 V) | β |
| Product Family | β | OptiMOS 5 25V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 25 V |
| Continuous Drain Current (ID) at Ta | β | 33 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| On-Resistance RDS(on) Max at VGS=10V | β | 1.5 mOhm |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 50 W |
| Package | β | PG-TDSON-8-6 (SuperSO8 5x6) |
| Gate Threshold Voltage VGS(th) Typ | β | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg Typ | β | [DATA_NEEDED: Qg typical value] |