ISC015N04NM5ATMA1 vs BSZ110N08NS5ATMA1 Comparison
Detailed side-by-side comparison of ISC015N04NM5ATMA1 by Infineon and BSZ110N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ110N08NS5ATMA1
BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon
BSZ110N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N04NM5ATMA1 | BSZ110N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.44 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 40V Normal Level | β |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 5 N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | 3.4 V (typ) | β |
| R_DS(on) max | 1.5 mOhm @ VGS=10 V, ID=50 A | β |
| Continuous Drain Current (ID) at Ta=25C | 33 A | β |
| Continuous Drain Current (ID) at Tc=25C | 206 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 115 W | β |
| Operating Temperature Range | -55 C to +175 C (junction, per OptiMOS 5) | [DATA_NEEDED: operating temperature range] |
| Package / Case | PG-TDSON-8 FL (SuperSO8 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per Infineon SuperSO8 family) | [DATA_NEEDED: MSL level] |
| Drive Level | Normal Level (VGS(th) ~3.4 V) | β |
| Part Family | β | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at Tc | β | 40 A |
| On-Resistance RDS(on) max | β | 11 mΞ© |
| Power Dissipation (PD) at Tc | β | 50 W |
| Package | β | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Polarity | β | N-Channel |
| Configuration | β | Single MOSFET |
| Gate Drive Voltage (VGS) | β | [DATA_NEEDED: VGS rating] |