ISC028N03LF2SATMA1 vs BSC340N08NS3GATMA1 Comparison
Detailed side-by-side comparison of ISC028N03LF2SATMA1 by Infineon and BSC340N08NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC028N03LF2SATMA1
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 β ActiveInfineon
BSC340N08NS3GATMA1
BSC340N08NS3GATMA1 - 80V 23A N-Ch OptiMOS 3 MOSFET | Infineon
BSC340N08NS3GATMA1 β ActiveSpecification Comparison
| Parameter | ISC028N03LF2SATMA1 | BSC340N08NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 30V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) max | 30 V | β |
| Continuous Drain Current (ID) at TA=25C | 24 A | β |
| Continuous Drain Current (ID) at TC=25C | 128 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 92 A |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation at TA | 3 W | β |
| Power Dissipation at TC | 83 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-TDSON-8-5 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | RoHS compliant, lead-free |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Part Number | β | BSC340N08NS3GATMA1 |
| Technology | β | OptiMOS 3 (N-Channel Trench) |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID, Tc) | β | 23 A |
| Continuous Drain Current (ID, Ta) | β | 7 A |
| On-State Resistance RDS(on) max @ VGS=10V | β | 34 mOhm |
| Gate-Source Voltage VGS max | β | +/- 20 V |
| Power Dissipation (Tc) | β | 32 W |
| Power Dissipation (Ta) | β | 2.5 W |
| Operating Temperature Range | β | -55C to +150C |
| Channel Type | β | Single N-Channel |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg typical] |
| Avalanche Rating | β | Repetitive avalanche rated |