ISC037N12NM6ATMA1 vs IPB35N10S3L26ATMA2 Comparison
Detailed side-by-side comparison of ISC037N12NM6ATMA1 by Infineon and IPB35N10S3L26ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 β Active
Specification Comparison
| Parameter | ISC037N12NM6ATMA1 | IPB35N10S3L26ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.62 | $0.48 |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | β |
| Drain-Source Voltage (Vds) | 120 V | 100 V |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | β |
| Pulsed Drain Current (Idm) at Tc | 163 A | β |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | β |
| Power Dissipation at Ta | 3 W | β |
| Power Dissipation at Tc | 214 W | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | β |
| Package | PG-TDSON-8 FL (SuperSO8) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | -55C to +175C |
| RoHS Status | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS Power-Transistor |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (Id) at Tc | β | 35 A |
| Pulsed Drain Current | β | 180 A |
| Power Dissipation (Pd) at Tc | β | 71 W |
| RDS(on) (typical) | β | 26.3 mOhm |
| Number of Pins | β | 3 |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical value] |
| Automotive Qualified | β | Yes (per Infineon product page classification) |