ISC037N12NM6ATMA1 vs IPTC017N12NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC037N12NM6ATMA1 by Infineon and IPTC017N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 β ActiveInfineon
IPTC017N12NM6ATMA1 - 120V 1.7mΞ© 331A OptiMOS 6 MOSFET | Infineon
IPTC017N12NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC037N12NM6ATMA1 | IPTC017N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.62 | $3.95 |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | OptiMOS 6, N-channel trench MOSFET |
| Drain-Source Voltage (Vds) | 120 V | β |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | β |
| Pulsed Drain Current (Idm) at Tc | 163 A | β |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | β |
| Power Dissipation at Ta | 3 W | β |
| Power Dissipation at Tc | 214 W | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | β |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | β |
| Package | PG-TDSON-8 FL (SuperSO8) | PG-HDSOP-16 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | β |
| RoHS Status | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Drain-Source Voltage (VDS) | β | 120 V |
| Continuous Drain Current (ID, Ta) | β | 32 A |
| Continuous Drain Current (ID, Tc) | β | 331 A |
| On-State Resistance RDS(on) max | β | 1.7 mΞ© at VGS = 10 V |
| Gate-Source Threshold VGS(th) | β | 2.4 V (typ) |
| Total Gate Charge QG | β | 141 nC at VGS = 10 V |
| Input Capacitance Ciss | β | 2.4 nF at VDS = 60 V |
| Output Capacitance Coss | β | 11000 pF at VDS = 60 V |
| Power Dissipation (Ta) | β | 3.8 W |
| Power Dissipation (Tc) | β | 395 W |
| Operating Temperature | β | -55 Β°C to +175 Β°C (TJ max) |
| Gate Drive Voltage (recommended) | β | 10 V |