ISC037N12NM6ATMA1 vs IPTC054N15NM5ATMA1 Comparison
Detailed side-by-side comparison of ISC037N12NM6ATMA1 by Infineon and IPTC054N15NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 β ActiveInfineon
IPTC054N15NM5ATMA1 - 150V 143A 5.4mΞ© OptiMOS 5 MOSFET | Infineon
IPTC054N15NM5ATMA1 β ActiveSpecification Comparison
| Parameter | ISC037N12NM6ATMA1 | IPTC054N15NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.62 | $1.52 |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | β |
| Drain-Source Voltage (Vds) | 120 V | β |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | β |
| Pulsed Drain Current (Idm) at Tc | 163 A | β |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | β |
| Power Dissipation at Ta | 3 W | β |
| Power Dissipation at Tc | 214 W | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | β |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | β |
| Package | PG-TDSON-8 FL (SuperSO8) | PG-HDSOP-16-2 (16-pin top-cooled) |
| Mounting Type | Surface Mount | Surface Mount (top-side cooled) |
| Operating Temperature Range | -55C to +175C (junction) | β |
| RoHS Status | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 (IPT family) |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 150 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 17.5 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 143 A |
| Power Dissipation (PD) at TA=25Β°C | β | 3.8 W |
| Power Dissipation (PD) at TC=25Β°C | β | 250 W |
| On-Resistance RDS(on) at VGS=10V, ID=50A | β | 5.4 mΞ© |
| Gate-Source Voltage (VGS) max | β | 20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) typical | β | 58 nC |
| Forward Body Diode Voltage (VSD) | β | 0.83 V |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Lead-Free | β | Yes |