ISC037N12NM6ATMA1 vs IQD005N04NM6ATMA1 Comparison

Detailed side-by-side comparison of ISC037N12NM6ATMA1 by Infineon and IQD005N04NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC037N12NM6ATMA1 ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISC037N12NM6ATMA1 IQD005N04NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.62 $0.82
Technology OptiMOS 6 (N-channel trench MOSFET) OptiMOS 6 trench MOSFET
Drain-Source Voltage (Vds) 120 V β€”
Continuous Drain Current (Id) at Ta=25C 19.2 A β€”
Pulsed Drain Current (Idm) at Tc 163 A β€”
On-Resistance Rds(on) typ at Vgs=10V 3.7 mOhm β€”
Power Dissipation at Ta 3 W β€”
Power Dissipation at Tc 214 W β€”
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] β€”
Gate Charge (Qg) typ [DATA_NEEDED: Qg total] β€”
Package PG-TDSON-8 FL (SuperSO8) PG-TSON-8-9 (PQFN 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (junction) -55C to +150C
RoHS Status Compliant Compliant
Avalanche Energy Rated Yes (single-pulse) β€”
MSL Level 1 (per JEDEC J-STD-020) 1
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 6 Power-Transistor
Polarity / Channel Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) at Ta=25C β€” 58 A
Pulsed Drain Current (IDM) at Tc β€” 610 A
On-Resistance RDS(on) max @ VGS=10V β€” 0.5 mOhm
Power Dissipation (Ta) β€” 3 W
Power Dissipation (Tc) β€” 333 W
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical]

Datasheets & Resources

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