ISC060N06NM6ATMA1 vs ISC037N12NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC060N06NM6ATMA1 by Infineon and ISC037N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC060N06NM6ATMA1
ISC060N06NM6ATMA1 - 60V 62A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N06NM6ATMA1 β ActiveInfineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC060N06NM6ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.33 | $3.62 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Ta | 15.2 A | β |
| Continuous Drain Current (ID) at Tc | 62 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 50 W | β |
| Package | PG-TDSON-8 (TDSON-8) | PG-TDSON-8 FL (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (60V generation) | OptiMOS 6 (N-channel trench MOSFET) |
| Configuration | Single N-Channel | β |
| Operating Temperature Range | -55C to +175C (junction, per OptiMOS 6 family) | -55C to +175C (junction) |
| Gate Drive | Standard gate drive (10 V VGS recommended for full RDS(on)) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| On-State Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max in mohm] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ/nC] | β |
| Drain-Source Voltage (Vds) | β | 120 V |
| Continuous Drain Current (Id) at Ta=25C | β | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | β | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | β | 3.7 mOhm |
| Power Dissipation at Ta | β | 3 W |
| Power Dissipation at Tc | β | 214 W |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | β | [DATA_NEEDED: Qg total] |
| Avalanche Energy Rated | β | Yes (single-pulse) |