ISC0703NLSATMA1 vs ISC080N10NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC0703NLSATMA1 by Infineon and ISC080N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
ISC080N10NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC0703NLSATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $1.05 |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Ta=25C | 13 A | β |
| Continuous Drain Current (ID) at Tc=25C | 57 A | β |
| Power Dissipation (PD) at Ta=25C | 3 W | β |
| Power Dissipation (PD) at Tc=25C | 44 W | β |
| Technology | Trench MOSFET (OptiMOS family) | β |
| Package | PG-TDSON-8 (5x6 mm) | PG-TDSON-8 FL (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | -55Β°C to +175Β°C (TJ max, per datasheet) |
| Standard Package Quantity | 5,000 (reel) | β |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020, per datasheet) |
| RoHS Status | Compliant | Compliant |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | 3.3 V at 36 Β΅A |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOSβ’ 6 100V |
| Drain-Source Voltage (VDS) Max | β | 100 V |
| Continuous Drain Current (ID) at Ta | β | 13 A |
| Continuous Drain Current (ID) at Tc | β | 75 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | β | 8.05 mΞ© |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| Qualification | β | Industrial grade (per Infineon OptiMOS 6 100V family) |