ISC0802NLSATMA1 vs BSC015NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of ISC0802NLSATMA1 by Infineon and BSC015NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC0802NLSATMA1
ISC0802NLSATMA1 - 100V 150A OptiMOS 5 N-MOSFET | Infineon
ISC0802NLSATMA1 β ActiveInfineon
BSC015NE2LS5IATMA1
BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon
BSC015NE2LS5IATMA1 β ActiveSpecification Comparison
| Parameter | ISC0802NLSATMA1 | BSC015NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.80 | $0.69 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| Part Number | ISC0802NLSATMA1 | β |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (Power MOSFET) | OptiMOS 5 trench |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at Tc | 150 A | 100 A |
| Continuous Drain Current (ID) at Ta | 22 A | 33 A |
| RDS(on) max at VGS=10V | 3.6 mOhm | β |
| Power Dissipation (Pd) at Ta | 2.5 W | β |
| Power Dissipation (Pd) at Tc | 125 W | β |
| Operating Temperature Range | -55 C to +175 C | -55C to +150C (junction) |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Product Family | β | OptiMOS 5 25V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 25 V |
| On-Resistance RDS(on) Max at VGS=10V | β | 1.5 mOhm |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 50 W |
| Pin Count | β | 8 |
| Gate Threshold Voltage VGS(th) Typ | β | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg Typ | β | [DATA_NEEDED: Qg typical value] |
| MSL Level | β | 1 (per JEDEC J-STD-020) |