ISC080N10NM6ATMA1 vs IAUT300N08S5N012ATMA2 Comparison

Detailed side-by-side comparison of ISC080N10NM6ATMA1 by Infineon and IAUT300N08S5N012ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUT300N08S5N012ATMA2

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Active

Specification Comparison

Parameter ISC080N10NM6ATMA1 IAUT300N08S5N012ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $2.20
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 6 100V OptiMOS™-5 80 V
Polarity / Channel Type N-Channel
Drain-Source Voltage (VDS) Max 100 V
Continuous Drain Current (ID) at Ta 13 A
Continuous Drain Current (ID) at Tc 75 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 1200 A (per datasheet, typical)
Power Dissipation (PD) at Ta 3 W
Power Dissipation (PD) at Tc 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A 8.05 mΩ
Gate Threshold Voltage (VGS(th)) 3.3 V at 36 µA
Package PG-TDSON-8 FL (TDSON EP) PG-HSOF-8-1 (8-pin HSOF with drain tab)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55°C to +175°C (TJ max, per datasheet) -55 °C to +175 °C (TJ)
MSL Level 1 (per JEDEC J-STD-020, per datasheet) [DATA_NEEDED: MSL level]
RoHS Status Compliant
Lead-Free Yes
Halogen-Free Yes
Qualification Industrial grade (per Infineon OptiMOS 6 100V family)
Transistor Type N-Channel MOSFET
Drain-to-Source Voltage (VDS) 80 V
Continuous Drain Current (ID, Tc=25°C) 300 A
On-Resistance RDS(on) max @ VGS=10V 1.2 mΩ
Maximum Power Dissipation (PD, Tc) 375 W
Gate-to-Source Voltage (VGS) ±20 V
Automotive Qualification AEC-Q101 qualified
RoHS Compliance Compliant

Datasheets & Resources

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