ISC151N08NM6ATMA1 vs IAUCN08S7L018ATMA1 Comparison

Detailed side-by-side comparison of ISC151N08NM6ATMA1 by Infineon and IAUCN08S7L018ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC151N08NM6ATMA1

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 βœ“ Active
Infineon
IAUCN08S7L018ATMA1

IAUCN08S7L018ATMA1 - 80V 1.8mΞ© OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L018ATMA1 βœ“ Active

Specification Comparison

Parameter ISC151N08NM6ATMA1 IAUCN08S7L018ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $1.55
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 80 V 80 V
Continuous Drain Current (TA=25Β°C) 9.2 A β€”
Continuous Drain Current (TC=25Β°C) 37 A β€”
Power Dissipation (TA) 3 W β€”
Power Dissipation (TC) 48 W β€”
On-Resistance RDS(on) max 15.1 mΞ© β€”
Gate Threshold Voltage VGS(th) typ 3.5 V β€”
Technology OptiMOS 6 N-Channel Trench MOSFET
Package PG-TDSON-8 FL PG-TDSON-8-43 (5x6 mm)
Mounting Type Surface Mount Surface Mount
Number of Pins 8 β€”
Channel Mode Enhancement β€”
Operating Temperature -55 Β°C to +175 Β°C β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 7
Continuous Drain Current (ID) at Tj β€” 210 A
Continuous Drain Current (ID) at Tc β€” [DATA_NEEDED: ID at Tc]
Maximum RDS(on) at VGS=10 V β€” 1.8 mΞ©
Power Dissipation (PD) at Tc=25 Β°C β€” 169 W
Operating Temperature Range β€” -55 Β°C to +175 Β°C
Qualification β€” Automotive (per Infineon part description)
Gate Drive Voltage (typical) β€” 10 V
MSL Level β€” [DATA_NEEDED: MSL level]

Datasheets & Resources

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