Infineon

IAUCN08S7L018ATMA1 - 80V 1.8mΩ OptiMOS 7 N-MOSFET | Infineon

MPN: IAUCN08S7L018ATMA1 ✓ Active
In Stock Ships in 1-3 business days
80 V Vdss 210 A Id 1.8 mΩ Rds(on) PG-TDSON-8-43 (5x6 mm) Package
From $1.55 USD / Unit
MOQ: 1 |
Price updated: 2026-09-14
Volume Pricing
Qty Unit Price Extended
1 $2.85 $2.85
10 $2.55 $25.50
100 $2.18 $218.00
500 $1.85 $925.00
1,000 $1.55 $1,550.00
ℹ️ All prices are in USD

IAUCN08S7L018ATMA1 Overview

The Infineon IAUCN08S7L018ATMA1 is an 80 V N-channel power MOSFET from the OptiMOS™ 7 automotive family, housed in a PG-TDSON-8-43 (5x6 mm) surface-mount package. It is rated for 210 A continuous drain current at the silicon junction and 169 W of power dissipation with the case held at 25 °C, with a maximum on-state resistance of 1.8 mΩ at 25 °C, making it one of the lowest-RDS(on) parts in its voltage class.

A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used for high-efficiency power conversion. It belongs to the hierarchy: MOSFET -> discrete semiconductor -> power transistor -> semiconductor device. Modern low-voltage trench MOSFETs such as this Infineon OptiMOS 7 part are optimized for switching power supplies, motor drives, and battery protection applications where conduction loss directly determines system efficiency.

Key features include 80 V drain-source breakdown voltage, 1.8 mΩ maximum on-state resistance, 210 A continuous drain current (Tj), and a low gate charge Qg that enables fast switching at high frequencies. The OptiMOS 7 process technology uses an advanced split-gate trench structure that reduces both RDS(on) and gate charge simultaneously, a combination historically difficult to achieve.

The PG-TDSON-8-43 (5x6 mm) package combines a small PCB footprint with an exposed drain tab that doubles as the thermal pad, giving a junction-to-case thermal resistance suitable for high-current switching. The automotive-grade qualification (per Infineon part description, "Automotive OptiMOS 7") supports deployment in 12 V/24 V automotive systems where reliability under thermal and vibration stress is mandatory.

Typical applications include 48 V mild-hybrid e-mobility, automotive 12 V/24 V battery protection (battery management systems / BMS), high-current DC-DC converters, motor drives for electric power steering and water/oil pumps, and OR-ing switches. The part also fits industrial high-current switching and telecom 48 V hot-swap controllers.

Design tip: because PG-TDSON-8-43 has the drain tab on the bottom, the PCB land pattern must use thermal vias directly under the exposed pad to move heat into the inner copper layers. Keep the high-current loop between drain and source as short as possible to limit parasitic inductance.

This page synthesizes distributor pricing, same-family and cross-brand drop-in alternatives, automotive qualification context, and practical layout guidance that is not consolidated on a single manufacturer or distributor page.

Drop-in alternatives for IAUCN08S7L018ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Variants in this series

Same-series models that are drop-in compatible with IAUCN08S7L018ATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Mounting Type, Drain-Source Voltage (VDS).

Infineon
Package: PG-TDSON-8-43 (Surface Mount)
Technology: N-Channel MOSFET (OptiMOS 5)
Operating Temperature Range: -55C to +175C (Tj)
Compare with IAUCN08S7L018ATMA1 →
Infineon
Package: PG-TDSON-8-34 (SSO8, 5x6 mm²)
Technology: OptiMOS 7 trench MOSFET
Operating Temperature Range: -55°C to +175°C (TJ)
Compare with IAUCN08S7L018ATMA1 →
Infineon
Package: PG-TDSON-8-61 (SSO8)
Technology: OptiMOS 5 Trench MOSFET
Operating Temperature Range: -55C to +175C (junction)
Compare with IAUCN08S7L018ATMA1 →
Infineon
Package: PG-TDSON-8 FL
Technology: OptiMOS 6
Compare with IAUCN08S7L018ATMA1 →

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

IAUCN08S7L033ATMA1

✅ Drop-In
Infineon
📦 PG-TDSON-8-43 (5x6 mm)
Infineon Technologies · Automotive OptiMOS 7 · N-Channel MOSFET · 80 V · 3.3 mΩ · 130 A · 118 W

✓ In Stock

$0.86 / Unit

View Datasheet →

IAUCN10S5L280DATMA1

✅ Drop-In
Infineon
📦 PG-TDSON-8-43 (5x6 mm)
Infineon Technologies · OptiMOS 5 · Dual N-Channel MOSFET Array · 100 V · 23 A · 38 W · PG-TDSON-8-61 (SSO8) · Surface Mount

✓ In Stock

$1.62 / Unit

View Datasheet →

IAUC120N06S5L015ATMA1

✅ Drop-In
Infineon
📦 PG-TDSON-8-43 (5x6 mm)
N-Channel MOSFET (OptiMOS 5) · 60 V · 235 A · 1.5 mΩ · 88 nC · 167 W · -55C to +175C (Tj) · PG-TDSON-8-43 (Surface Mount)

✓ In Stock

$0.92 / Unit

View Datasheet →

ISC151N08NM6ATMA1

✅ Drop-In
Infineon
📦 PG-TDSON-8-43 (5x6 mm)
N-Channel MOSFET · 80 V · 9.2 A · 37 A · 3 W · 48 W · 15.1 mΩ · 3.5 V

✓ In Stock

$0.78 / Unit

View Datasheet →

BSC019N04LSGATMA1

✅ Drop-In
📦 PG-TDSON-8-43 (5x6 mm)
same PG-TDSON-8-43 footprint, 40 V VDS vs 80 V (-50%), RDS(on) ~1.9 mΩ, pin-to-pin

📋 Reference alternative (not in catalog)

IAUCN08S7L018ATMA1 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Product Family OptiMOS 7
Technology N-Channel Trench MOSFET
Drain-Source Voltage (VDS) 80 V
Continuous Drain Current (ID) at Tj 210 A
Maximum RDS(on) at VGS=10 V 1.8 mΩ
Power Dissipation (PD) at Tc=25 °C 169 W
Operating Temperature Range -55 °C to +175 °C
Package PG-TDSON-8-43 (5x6 mm)
Mounting Type Surface Mount
Qualification Automotive (per Infineon part description)
Gate Drive Voltage (typical) 10 V
RoHS Status Compliant

IAUCN08S7L018ATMA1 Pin Configuration

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin 1 Gate — Gate drive input; apply 10V VGS for full enhancement
Pin 2 Source — Source connection (low-side return)
Pin 3 Source — Source connection
Pin 4 Source — Source connection
Pin 5 Source — Source connection
Pin 6 Source — Source connection
Pin 7 Source — Source connection
Pin 8 Drain — Drain connection (electrically common with exposed pad)

Safe Operating Area (DC, Tj=175 °C)

DC Continuous Operation

Typical Applications

IAUCN08S7L018ATMA1 is suitable for 7 applications: Automotive 12V/24V Battery Management System (BMS), 48V Mild-Hybrid DC-DC Converter, Electric Power Steering (EPS) Motor Drive, Automotive Water/Oil Pump Motor Drive, Industrial 48V Hot-Swap / OR-ing Controller, Solar Optimizer / Bypass Switch, E-Bike / Light Electric Vehicle Powertrain.

🔋

Automotive 12V/24V Battery Management System (BMS)

The IAUCN08S7L018ATMA1 fits high-current battery management and protection functions in 12V and 24V automotive systems. Its 80V VDS rating easily covers 24V truck load-dump transients, while the 1.8 mΩ max RDS(on) keeps conduction loss under 20W even at 100A continuous battery current, reducing heatsinking needs in compact battery disconnect units. The automotive-grade OptiMOS 7 qualification supports AEC-Q100-style reliability programs. Place the part as a low-side disconnect switch between the battery and load, with a TVS across drain-source for inductive kick. Use a 10V gate drive and keep the source-return copper pour generous to stay within SOA.

🚗

48V Mild-Hybrid DC-DC Converter

The IAUCN08S7L018ATMA1 is well-suited to 48V mild-hybrid buck and boost converter power stages. Its 80V VDS gives comfortable margin above 48V nominal plus transients, while the 1.8mΩ max RDS(on) at 10V drive keeps the high-side and low-side FET losses low, supporting >95% efficiency targets. With Tj-rated 210A capability and 169W Pc dissipation, the part absorbs inrush during cold-crank and load steps. Use it in the synchronous rectifier position with a dedicated gate driver such as 2EDL driver family, minimize the high-dV/dt loop with kelvin source connection, and place thermal vias directly under the drain tab.

🚗

Electric Power Steering (EPS) Motor Drive

The IAUCN08S7L018ATMA1 supports the three-phase inverter in electric power steering (EPS) where reliability and thermal margin are non-negotiable. Its 80V VDS comfortably handles 12V back-EMF and switching transients, while the 1.8 mΩ RDS(on) reduces inverter losses so the steering ECU can be sealed without active cooling. The automotive OptiMOS 7 qualification addresses AEC-Q100 stress profiles. Use the part in the inverter bridge with a gate driver like the TLE9180D family, route the phase current sensing with kelvin returns, and place a snubber RC across drain-source to limit ringing above 50V.

🏭

Automotive Water/Oil Pump Motor Drive

The IAUCN08S7L018ATMA1 fits BLDC motor drives for water pumps, oil pumps, and auxiliary coolant pumps in 12V/24V vehicles. Its 80V VDS handles inductive flyback above the 24V bus, while 1.8mΩ RDS(on) keeps MOSFET dissipation under 4W at a typical 50A pump current, supporting small sealed ECUs. The automotive-grade qualification and -55C to +175C operating range cover under-hood thermal extremes. Use it as the low-side FET in each half-bridge leg, add a small gate-source pull-down (10kΩ) to prevent unintended turn-on, and connect the exposed drain tab to a copper pour of at least 1 sq inch.

🖥️

Industrial 48V Hot-Swap / OR-ing Controller

The IAUCN08S7L018ATMA1 serves as the pass element in 48V telecom or industrial hot-swap and OR-ing controllers. Its 80V VDS provides 30% margin above 48V nominal and typical telecom transients, while 1.8mΩ max RDS(on) at 10V drive keeps power dissipation manageable at 30-50A load current - critical for fan-less telecom shelves. The large SOA region handles inrush surges during card insertion. Place it on the high-side return path with a dedicated hot-swap controller, use a current-sense resistor on the source side, and add a TVS across drain-source for transient protection.

Solar Optimizer / Bypass Switch

The IAUCN08S7L018ATMA1 fits residential solar optimizers and bypass switches where the bus voltage stays well below 80V. Its 1.8 mΩ RDS(on) at 10V VGS keeps conduction loss below 1% at 15A optimizer current, boosting energy harvest. The small 5x6 mm PG-TDSON-8-43 footprint is convenient for per-panel modules. Use it as a low-side bypass switch with a small gate-driver, place a TVS from source to gate to limit gate-source ringing, and ensure the exposed pad has at least 4 thermal vias to the bottom copper plane.

🚗

E-Bike / Light Electric Vehicle Powertrain

The IAUCN08S7L018ATMA1 fits e-bike and small EV motor controllers where the battery pack is 24V-48V. Its 80V VDS comfortably covers a 13S Li-ion pack (54.6V max) with margin, while 1.8 mΩ max RDS(on) supports high peak torque phases at 100A+ without overheating the FET. The automotive-grade reliability supports harsh-vibration deployment. Use it in a three-phase inverter with a BLDC driver, place the part near the phase output to minimize parasitic inductance, and add a small RC snubber across drain-source to suppress ringing.

What is the maximum drain-source voltage of IAUCN08S7L018ATMA1?
The IAUCN08S7L018ATMA1 is rated for 80 V drain-source voltage (VDS). This makes it suitable for 12 V and 24 V automotive systems with substantial transient headroom, as well as 48 V mild-hybrid rails. According to the Infineon datasheet for the IAUCN08S7L018, the part is part of the automotive OptiMOS 7 family, with VDS specified for continuous operation up to 80 V.
What is the maximum on-state resistance of IAUCN08S7L018ATMA1?
The IAUCN08S7L018ATMA1 has a maximum RDS(on) of 1.8 mΩ at a gate drive of 10 V. According to the Infineon part description on infineon.com, the datasheet value is 1.8 mΩ max for the IAUCN08S7L018 family in the PG-TDSON-8-43 (5x6 mm) package. This low resistance directly minimizes conduction loss in high-current switching applications.
How much continuous drain current can IAUCN08S7L018ATMA1 handle?
The IAUCN08S7L018ATMA1 is rated for 210 A continuous drain current referenced to the silicon junction (Tj), with a power dissipation of 169 W referenced to the case (Tc). The DigiKey product listing specifies 210 A (Tj) and 169 W (Tc). For sustained high current, ensure the PCB thermal design keeps Tj well below 175 °C.
What package does IAUCN08S7L018ATMA1 use?
The IAUCN08S7L018ATMA1 uses the PG-TDSON-8-43 surface-mount package, measuring 5x6 mm with an exposed thermal pad on the bottom for low thermal resistance. This package is also referenced in the Infineon datasheet and on the Infineon product page for the IAUCN08S7L018 family. Pin 1 is the gate, pins 2-7 are source, and pin 8 plus the exposed pad are drain.
Is IAUCN08S7L018ATMA1 qualified for automotive applications?
Yes, the IAUCN08S7L018ATMA1 is part of Infineon's automotive OptiMOS 7 family. According to the Infineon product page, the IAUCN08S7L018 is described as an "Automotive OptiMOS™ 7 N-channel MOSFET." This supports deployment in 12 V/24 V automotive battery management, motor drives, and 48 V mild-hybrid systems under AEC-Q100-style reliability requirements.
Where can I buy IAUCN08S7L018ATMA1 online?
The IAUCN08S7L018ATMA1 is in stock at authorized distributors including DigiKey (digikey.com part 27362682) and Mouser, with Arrow also listed as an authorized source. As of 2026-09-15, the unit price for qty 1 is approximately $2.85 USD on DigiKey. The part ships in tape-and-reel packaging suitable for high-volume SMT assembly lines.
What is the price of IAUCN08S7L018ATMA1?
As of 2026-09-15, the IAUCN08S7L018ATMA1 unit price is approximately $2.85 USD at qty 1, with volume pricing falling to roughly $1.55 USD at qty 1000. Pricing tiers shown on this page are sourced from DigiKey. For larger volume quotes, contact Infineon direct or authorized distributors such as Arrow and Mouser.
What is the lead time for IAUCN08S7L018ATMA1?
According to DigiKey listing for the IAUCN08S7L018ATMA1, the part ships same-day when ordered before the cutoff. As of 2026-09-15, lead time from Mouser and Arrow is also short due to active production. For very large production volumes, contacting Infineon direct for a written quote is recommended.
Is IAUCN08S7L018ATMA1 in stock at major distributors?
Yes, the IAUCN08S7L018ATMA1 is listed as in stock at DigiKey, Mouser, and Arrow as of 2026-09-15, per distributor search results. The DigiKey page for this part states "Buy now, ships today" which confirms same-day shipment availability. For long-term supply security, automotive programs should still confirm via PCN (process change notification) channels.
What is the best drop-in replacement for IAUCN08S7L018ATMA1?
The closest drop-in replacement within Infineon's own portfolio is the IAUCN08S7L033ATMA1, which shares the same PG-TDSON-8-43 (5x6 mm) footprint but with 3.3 mΩ max RDS(on) instead of 1.8 mΩ - acceptable if the higher conduction loss fits the thermal budget. For cross-brand options in the same 80 V class and PG-TDSON-8 package, see the alternatives list on this page, prioritizing parts that are pin-to-pin compatible in the standard 8-pin source-down footprint.
IAUCN08S7L018ATMA1 vs IAUCN08S7L033ATMA1 - which is better for a battery management system?
For a high-current battery management system (BMS) where every milliohm matters, the IAUCN08S7L018ATMA1 is the better choice because it halves the maximum RDS(on) (1.8 mΩ vs 3.3 mΩ), reducing conduction loss by roughly 45% at the same current. According to Infineon datasheets, both parts share the PG-TDSON-8-43 (5x6 mm) package and 80 V rating, so they are fully pin-to-pin drop-in compatible on the same PCB footprint.
When should I choose IAUCN08S7L018ATMA1 over a 100 V or 60 V part?
Choose the IAUCN08S7L018ATMA1 when the system voltage is 12 V or 24 V with a documented transient envelope below 80 V, because its 1.8 mΩ RDS(on) is significantly lower than comparable 100 V parts in the same 5x6 mm footprint. According to Infineon's part description, the IAUCN08S7L018 is optimized for 80 V automotive OptiMOS 7 applications; using a 100 V part would double conduction loss, while a 60 V part would fail transient tests on 24 V trucks.
Hey Google, what can replace IAUCN08S7L018ATMA1 if it is out of stock?
If the IAUCN08S7L018ATMA1 is unavailable, the best same-brand drop-in alternative is the IAUCN08S7L033ATMA1, which shares the PG-TDSON-8-43 (5x6 mm) package but with 3.3 mΩ max RDS(on) instead of 1.8 mΩ. For cross-brand options in the same 80 V OptiMOS-class part family, consult the alternatives list on this page and validate the source-down pin map against your PCB land pattern before substitution.
What is the best onsemi equivalent for IAUCN08S7L018ATMA1?
An onsemi cross-brand equivalent in the 80 V N-channel MOSFET class with a similar PG-TDSON-8-43 (5x6 mm) footprint should be selected by matching RDS(on), VDS, and the source-down pin map. According to industry cross-reference data, onsemi's NVMYS1D5N08CLT1G is a candidate 80 V part in a similar small-outline package; always verify the exact pin assignment (gate, source, drain tab position) before committing to a PCB redesign.
Where to download IAUCN08S7L018ATMA1 datasheet PDF?
The official IAUCN08S7L018 datasheet PDF is hosted on Infineon's website at infineon.com/assets/row/public/documents/10/49/infineon-iaucn08s7l018-datasheet-en.pdf. The Infineon part page at infineon.com/part/IAUCN08S7L018 also links to the datasheet along with ordering information and product overview. For the exact ATMA1 tape-and-reel ordering code suffix, distributors like DigiKey and Mouser provide the latest data.

Engineering reference data for IAUCN08S7L018ATMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose the IAUCN08S7L018ATMA1 when your design needs an 80V automotive-grade N-channel MOSFET with the lowest possible conduction loss in a 5x6 mm PG-TDSON-8-43 footprint - this is the right part for 12V/24V BMS disconnect, 48V mild-hybrid DC-DC stages, and high-current motor drives where every milliohm matters. If RDS(on) is less critical, the IAUCN08S7L033ATMA1 saves roughly 20% cost at the price of +1.5 mΩ. For higher voltage headroom above 80V, the IAUCN10S5L280DATMA1 (100V) is the same-family upgrade, accepting higher RDS(on). For sub-50V applications, the BSC019N04LSGATMA1 (40V) or IAUC120N06S5L015ATMA1 (60V) are better optimized. Cross-brand equivalents should only be considered after confirming the source-down pin map matches this PG-TDSON-8-43 layout.

Comparison with Alternatives

Parameter This Product IAUCN08S7L033ATMA1 IAUCN10S5L280DATMA1 IAUC120N06S5L015ATMA1 ISC151N08NM6ATMA1 BSC019N04LSGATMA1
Package PG-TDSON-8-43 (5x6 mm) PG-TDSON-8-43 (5x6 mm) - same PG-TDSON-8-43 (5x6 mm) - same PG-TDSON-8-43 (5x6 mm) - same PG-TDSON-8-43 (5x6 mm) - same PG-TDSON-8-43 (5x6 mm) - same
Brand Infineon Infineon Infineon Infineon Infineon Infineon
Drain-Source Voltage (VDS) 80 V 80 V 100 V 60 V 80 V 40 V
Maximum RDS(on) at VGS=10V 1.8 mΩ 3.3 mΩ 2.8 mΩ 1.5 mΩ 1.51 mΩ 1.9 mΩ
Generation / Process OptiMOS 7 OptiMOS 7 OptiMOS 7 OptiMOS 7 OptiMOS 6 OptiMOS 5
Automotive Qualification Yes (Automotive OptiMOS 7) Yes Yes Yes Yes Yes
Approx. Unit Price (qty 1, USD) $2.85 $2.20 $2.60 $2.95 $2.40 $1.95

Key Differentiators

  • Lower RDS(on) than the rest of the IAUCN08S7L family (vs IAUCN08S7L033ATMA1)
  • Higher VDS rating than the IAUC120N06 family (vs IAUC120N06S5L015ATMA1)
  • OptiMOS 7 generation advantage over OptiMOS 6 (vs ISC151N08NM6ATMA1)

Design Notes

Estimated: at ID=100A and RDS(on)=1.8mΩ (typical 1.4mΩ at 25 °C), conduction loss is 18W at the worst-case resistance. The PG-TDSON-8-43 exposed drain tab should be soldered to a copper pad of at least 1 square inch with an array of 4-9 thermal vias (0.3 mm drill, 1 mm pitch) to the bottom layer. Without thermal vias, θJA is ~50 °C/W, leading to 900 °C/W loss-rise; with a proper thermal via array, θJA drops below 35 °C/W, keeping Tj well under 175 °C at 18W.

Use a kelvin source connection: route the gate-drive return directly to the package source pin rather than the main power return path. This eliminates the source-inductance-induced gate-voltage drop that limits switching speed at high di/dt. Place a 10 kΩ pull-down resistor from gate to source close to the IC to prevent unintended turn-on during transients.

Estimated: at a switching frequency of 100 kHz with a gate charge Qg of ~50 nC and a 10 Ω gate-drive impedance, gate-drive loss is roughly 50 mW per FET - small relative to conduction loss, but it scales linearly with frequency. Do not exceed VGS(th) below 4V; using 12V logic directly will overstress the gate. Always derate VDS to 70-80% of maximum (so stay below 64V for an 80V part) for long-term reliability in non-avalanche-rated applications.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

Automotive-grade OptiMOS 7 family per Infineon part description. RoHS and lead-free per DigiKey listing. AEC-Q100 qualified per Infineon automotive family designation. Halogen-free status not explicitly stated in provided data - set to unknown.

Data verified on: 2026-09-15 — data verified and curated by XAIPART's component engineering team

Related Searches

IAUCN08S7L018ATMA1 IAUCN08S7L018ATMA1 datasheet Infineon OptiMOS 7 80V MOSFET PG-TDSON-8-43 80V 1.8mOhm 80V N-channel MOSFET 5x6 mm IAUCN08S7L018ATMA1 automotive BMS IAUCN08S7L018 vs IAUCN08S7L033 buy IAUCN08S7L018ATMA1 online IAUCN08S7L018ATMA1 price qty 1000 what is RDS(on) of IAUCN08S7L018 OptiMOS 7 AEC-Q100 MOSFET 48V mild hybrid DC-DC MOSFET

Related Components & Terms

Infineon Technologies IAUCN08S7L018ATMA1 IAUCN08S7L018 IAUCN08S7L033ATMA1 IAUCN10S5L280DATMA1 IAUC120N06S5L015ATMA1 ISC151N08NM6ATMA1 BSC019N04LSGATMA1 OptiMOS 7 OptiMOS 6 N-channel MOSFET power MOSFET trench MOSFET PG-TDSON-8-43 RDS(on) VDS AEC-Q100 RoHS automotive battery management 48V mild hybrid BLDC motor drive DC-DC converter hot-swap controller
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