ISC151N08NM6ATMA1 vs IPB051N15NM6ATMA1 Comparison

Detailed side-by-side comparison of ISC151N08NM6ATMA1 by Infineon and IPB051N15NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC151N08NM6ATMA1

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISC151N08NM6ATMA1 IPB051N15NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $2.02
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 80 V 150 V
Continuous Drain Current (TA=25Β°C) 9.2 A β€”
Continuous Drain Current (TC=25Β°C) 37 A β€”
Power Dissipation (TA) 3 W β€”
Power Dissipation (TC) 48 W β€”
On-Resistance RDS(on) max 15.1 mΞ© β€”
Gate Threshold Voltage VGS(th) typ 3.5 V β€”
Technology OptiMOS 6 β€”
Package PG-TDSON-8 FL β€”
Mounting Type Surface Mount Surface Mount
Number of Pins 8 β€”
Channel Mode Enhancement β€”
Operating Temperature -55 Β°C to +175 Β°C β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 6
FET Type β€” N-Channel
Continuous Drain Current (ID) at TA=25C β€” 18 A
Continuous Drain Current (ID) at TC=25C β€” 139 A
RDS(on) Typical at VGS=10 V β€” 5.1 mOhm
Gate Charge (Qg) Typical β€” 51 nC
Gate-Source Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (PD) at TA=25C β€” 3.8 W
Power Dissipation (PD) at TC=25C β€” 234 W
Operating Temperature Range β€” -55C to +175C
Package / Case β€” PG-TO263-3-2 (D2PAK)
Pin Count β€” 3 (Drain, Source, Gate)
MSL Level β€” 1 (per JEDEC J-STD-020)
Avalanche Rated β€” Yes

Datasheets & Resources

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