ISZ019N03L5SATMA1 vs BSC014N04LSTATMA1 Comparison
Detailed side-by-side comparison of ISZ019N03L5SATMA1 by Infineon and BSC014N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ019N03L5SATMA1 - 30V 1.9mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 β ActiveInfineon
BSC014N04LSTATMA1
BSC014N04LSTATMA1 - 40V 1.4mΞ© OptiMOS 5 N-MOSFET | Infineon
BSC014N04LSTATMA1 β ActiveSpecification Comparison
| Parameter | ISZ019N03L5SATMA1 | BSC014N04LSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 (<= 40V) | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 22 A | β |
| Continuous Drain Current (ID) at TC=25C | 40 A | β |
| RDS(on) at VGS=10V | 1.9 mΞ© (typical, ID=20A) | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | β |
| Gate-Source Voltage Rating (VGS) | Β±20 V | β |
| Total Gate Charge (Qg) | 44 nC at VGS=10V | β |
| Input Capacitance (Ciss) | 2800 pF at VDS=15V | β |
| Package | PG-TSDSON-8-FL (5x6 mm) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (TJ max) | -55Β°C to +150Β°C |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL1 |
| RoHS / REACH | Compliant | β |
| Avalanche Rated | Yes | β |
| RG-tested | 100% | β |
| Part Number | β | BSC014N04LSTATMA1 |
| Technology | β | OptiMOS 5 (N-Channel Trench) |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (ID) @ TA=25Β°C | β | 33 A |
| Continuous Drain Current (ID) @ TC=25Β°C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R DS(on) max @ VGS=10V | β | 1.45 mΞ© |
| R DS(on) typical @ VGS=10V | β | [DATA_NEEDED: RDS(on) typical] |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 115 W |
| Pin Count | β | 8 |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |