ISZ028N03LF2SATMA1 vs ISC016N08NM8SCATMA1 Comparison
Detailed side-by-side comparison of ISZ028N03LF2SATMA1 by Infineon and ISC016N08NM8SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 β ActiveInfineon
ISC016N08NM8SCATMA1
ISC016N08NM8SCATMA1 - 80V OptiMOS 8 N-Channel MOSFET | Infineon
ISC016N08NM8SCATMA1 β ActiveSpecification Comparison
| Parameter | ISZ028N03LF2SATMA1 | ISC016N08NM8SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $1.72 |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET 2 (Trench MOSFET) | OptiMOS 8 (shield-gate trench) |
| Drain-Source Voltage (VDS) | 30 V | 80 V |
| Continuous Drain Current (ID) at Tc | 128 A | β |
| Continuous Drain Current (ID) at Ta | 22 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance (RDS(on)) max | 2.8 mΞ© | β |
| Power Dissipation (Tc) | 83 W | β |
| Power Dissipation (Ta) | 3 W | β |
| Package | PG-TSDSON-8 FL (FL = flat lead) | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction, typical) | -55C to +175C |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: typical Qg @ VGS=10V] |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 8 |
| Continuous Drain Current at TA=25Β°C (ID) | β | 29 A |
| Continuous Drain Current at TC=25Β°C (ID) | β | 269 A |
| Power Dissipation at TC=25Β°C (PD) | β | 263 W |
| On-Resistance RDS(on) at VGS=10V | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Drain Tab Connection | β | Top + bottom exposed (dual-side cooling) |