ISC016N08NM8SCATMA1 - 80V OptiMOS 8 N-Channel MOSFET | Infineon
MPN: ISC016N08NM8SCATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $2.98 | $29.80 |
| 100 | $2.41 | $241.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.72 | $1,720.00 |
ISC016N08NM8SCATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to commutate high currents with low on-resistance. The OptiMOS 8 family sits inside the broader N-channel MOSFET hypernymy: power MOSFET -> MOSFET -> discrete semiconductor -> power management. Within Infineon's lineup, OptiMOS 8 represents the newest generation optimized for 40-200V systems, with successive generations trading on-resistance for switching speed using advanced trench-gate process technology. OptiMOS 8 specifically targets telecom, server, and OR-ing applications where every milliohm of RDS(on) translates into watt-level loss reduction.
Key features of the ISC016N08NM8SCATMA1 include the 80V drain-source breakdown voltage, very low typical RDS(on) in the sub-1.6 mΩ range for the SuperSO8 DSC footprint, the dual-side cooling PG-WSON-8-2 package that exposes the die on both top and bottom for maximum thermal transfer, and 100% Rg and UIS (unclamped inductive switching) tested production lots. The SuperSO8 DSC package preserves the industry-standard 5x6 mm SuperSO8 footprint, enabling drop-in PCB migration from previous generations.
Architecturally, OptiMOS 8 uses a refined shield-gate trench structure to lower RDS(on)·Qg figure of merit. Compared with OptiMOS 5 and OptiMOS 6, OptiMOS 8 typically reduces output capacitance (Coss) and gate charge (Qg) by 30-50%, enabling faster switching edges and lower driver loss in 48V bus converters, synchronous rectification, and hot-swap controllers.
Typical applications include 48V telecom bus converters, server VR stages and OR-ing FETs in redundant power supplies, hot-swap and eFuse circuits in data-center backplanes, industrial SMPS synchronous rectification stages, and high-current motor drive half-bridges. Choose this part when an 80V breakdown and very low RDS(on) in the SuperSO8 DSC land pattern are required.
Design consideration: the dual-side cooling package requires copper pours on both top and bottom PCB layers at the drain tab. Omitting the top-side thermal pad increases junction-to-ambient thermal resistance by approximately 2x and may force derating below 29A continuous current.
This page synthesizes distributor pricing, drop-in OptiMOS 8 family alternatives, and PCB layout guidance not found in the manufacturer datasheet - providing engineers a faster path from selection to qualified source.
Drop-in alternatives for ISC016N08NM8SCATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISC016N08NM8SCATMA1 (same form factor and footprint) — differing in Operating Temperature Range, Package, Technology, MSL Level, Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISC016N08NM8SC
✅ Drop-In📋 Reference alternative (not in catalog)
ISC019N10NM8SC
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ISZ028N03LF2SATMA1
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View Datasheet →IAUCN08S7L033ATMA1
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$0.86 / Unit
View Datasheet →IQE036N08NM6CGATMA1
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View Datasheet →IAUCN10S5L280DATMA1
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View Datasheet →ISC016N08NM8SCATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 8 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current at TA=25°C (ID) | 29 A |
| Continuous Drain Current at TC=25°C (ID) | 269 A |
| Power Dissipation at TC=25°C (PD) | 263 W |
| Package | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS 8 (shield-gate trench) |
| Operating Temperature Range | -55C to +175C |
| RoHS Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Drain Tab Connection | Top + bottom exposed (dual-side cooling) |
ISC016N08NM8SCATMA1 Pin Configuration
| Pin 1 | Source — Power source connection (pin 1 of SuperSO8 DSC) |
| Pin 2 | Source — Power source connection |
| Pin 3 | Source — Power source connection |
| Pin 4 | Gate — Gate drive input (single gate pin on SuperSO8 DSC) |
| Pin 5 | Drain — Power drain connection |
| Pin 6 | Drain — Power drain connection |
| Pin 7 | Drain — Power drain connection |
| Pin 8 | Drain — Power drain connection |
ISC016N08NM8SCATMA1 Safe Operating Area (DC, TC=25°C)
Typical Applications
ISC016N08NM8SCATMA1 is suitable for 6 applications: 48V Telecom Bus Converter, Server OR-ing and Redundant Power, Hot-Swap and eFuse in Data-Center Backplanes, Industrial SMPS Synchronous Rectification, High-Current Motor Drive Half-Bridge, Automotive 48V Mild-Hybrid Bus.
48V Telecom Bus Converter
The ISC016N08NM8SCATMA1 fits 48V telecom bus converter designs where its 80V VDS provides 60% voltage headroom over the nominal 48V rail and its very low RDS(on) directly cuts conduction loss in synchronous rectification stages. Placed as the low-side FET on the secondary side of a 48V-to-PoL isolated converter, the OptiMOS 8 shield-gate trench process cuts Coss by 30-50% versus OptiMOS 5, enabling sub-100 ns switching edges with reduced driver loss. The 29A continuous rating at TA=25°C covers most 600W-1.2kW module power levels, while the dual-side cooling SuperSO8 DSC package halves thermal resistance versus single-side cooling alternatives. Designers should keep VIN transients within the SOA curve and provide top-side copper thermal vias at the drain tab to fully exploit the dual-side cooling benefit.
Recommended
Server OR-ing and Redundant Power
The ISC016N08NM8SCATMA1 suits server OR-ing and redundant power supply designs where its 80V breakdown covers 48V rails and its very low RDS(on) minimizes voltage drop and heat in the OR-ing path. In a redundant -48V distribution, two ISC016N08NM8SCATMA1 MOSFETs in back-to-back configuration carry the full load current with milliohm-level drop that is well below the 1V OR-ing FET budget. The 29A continuous rating supports 1.4kW per rail; paralleling two ISC016N08NM8SCATMA1 devices extends to 2.8kW per rail with active current sharing. The dual-side cooling package is essential in 1U server chassis where airflow is constrained, allowing sustained 269A pulsed operation during hot-swap events. Verify hot-swap inrush control with SOA curves from the manufacturer datasheet.
Recommended
Hot-Swap and eFuse in Data-Center Backplanes
The ISC016N08NM8SCATMA1 is well-matched to 48V hot-swap and eFuse circuits on data-center backplanes, where its 80V VDS absorbs the full -48V input plus transient ringing and its 269A pulsed rating handles the inrush into bulk capacitors. The OptiMOS 8 low-Coss characteristic reduces switching loss during active current-limit foldback events, while the SuperSO8 DSC package sustains the repetitive peak current without thermal runaway. In a typical design, the ISC016N08NM8SCATMA1 sits between the backplane feed and downstream POL converters with a hot-swap controller providing fault timing. Use the SOA curve to validate dV/dt and di/dt envelopes; keep top-side thermal copper to ensure the dual-side cooling benefit is preserved.
Recommended
Industrial SMPS Synchronous Rectification
The ISC016N08NM8SCATMA1 excels as a synchronous rectifier on the secondary side of 24V/48V industrial SMPS converters, where its very low RDS(on) and 80V breakdown comfortably derate under the 60V worst-case rectified secondary voltage. Replacing a Schottky diode with the ISC016N08NM8SCATMA1 typically cuts secondary rectification loss by 50-70%, and the OptiMOS 8 shield-gate trench minimizes body-diode reverse-recovery charge to limit voltage spikes across the transformer secondary. The 263W TC power dissipation supports continuous output power above 1.5kW when mounted on a 40mm x 40mm copper PCB footprint. Drive the FET with a tight, propagation-matched gate driver such as the 2EDN7434RXTMA1 to fully exploit the fast switching capability.
Recommended
High-Current Motor Drive Half-Bridge
The ISC016N08NM8SCATMA1 fits 48V-class high-current BLDC and servo motor drive half-bridges where its 80V breakdown covers the DC bus with margin and its 29A continuous / 269A pulsed current ratings accommodate the peak load profile. The dual-side cooling SuperSO8 DSC package is critical in sealed motor-drive enclosures where top-side heatsinking is unavailable; the bottom thermal pad must still connect through an array of thermal vias. The OptiMOS 8 low-Qg characteristic reduces driver loss at 50-100kHz PWM, allowing higher fundamental switching frequency and lower acoustic noise. Validate that the ISC016N08NM8SCATMA1 body-diode reverse recovery stays within the half-bridge dead-time window to prevent shoot-through.
Recommended
Automotive 48V Mild-Hybrid Bus
The ISC016N08NM8SCATMA1 is a candidate for 48V mild-hybrid bus switching where its 80V breakdown covers the 48V nominal plus load-dump transient and its SuperSO8 DSC footprint enables compact PCB layout. Note that AEC-Q101 automotive qualification is not explicitly listed in the verified data for this exact MPN - for production automotive programs, verify the latest Infineon automotive-grade OptiMOS 8 part number with the Infineon automotive product team before committing to this specific MPN. The 29A continuous rating covers most 48V eFan and auxiliary load-switching applications.
Recommended
Recommended Products Summary
Engineering reference data for ISC016N08NM8SCATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC016N08NM8SC | ISC019N10NM8SC | ISZ028N03LF2SATMA1 | IAUCN08S7L033ATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-WSON-8-2 (SuperSO8 DSC) | PG-WSON-8-2 (SuperSO8 DSC) - same | PG-WSON-8-2 (SuperSO8 DSC) - same | PG-WSON-8-2 (SuperSO8 DSC) - same | PG-WSON-8-2 (SuperSO8 DSC) - same | PG-WSON-8-2 (SuperSO8 DSC) - same |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 100 V | 30 V | 80 V | 80 V |
| Process Generation | OptiMOS 8 | OptiMOS 8 | OptiMOS 8 | OptiMOS (lower voltage class) | OptiMOS-class | OptiMOS 6 (prior generation) |
| Cooling Configuration | Dual-side (DSC) | Dual-side (DSC) | Dual-side (DSC) | Dual-side (DSC) | Dual-side (DSC) | Dual-side (DSC) |
Key Differentiators
- Latest OptiMOS 8 generation, lowest RDS(on) in SuperSO8 DSC footprint (vs IQE036N08NM6CGATMA1)
- Dual-side cooling enables ~2x thermal performance vs single-side cooling SuperSO8 (vs ISC016N08NM8 (standard SuperSO8 single-side cooling))
- 80V breakdown optimized for 48V telecom / server rails (vs ISZ028N03LF2SATMA1)
Design Notes
The PG-WSON-8-2 SuperSO8 DSC dual-side cooling package exposes the drain tab on both top and bottom for thermal transfer. Omitting the top-side copper thermal pad typically doubles junction-to-ambient thermal resistance versus the datasheet figure, which can force derating well below 29A continuous current. Use thermal vias (0.3 mm drill, 0.5-1.0 mm pitch) under the bottom pad to a 2 oz copper inner plane and place a copper land of at least 1 cm x 1 cm on the top layer above the package. Estimated: at 5W dissipation in still air with top-side thermal copper, expect theta_JA near 35-45 C/W; without top-side copper, theta_JA may exceed 80 C/W.
Place the gate drive loop as physically tight as possible: keep the gate driver within 5 mm of the Gate pin, use a Kelvin-source connection if the package exposes one, and route the gate trace away from the drain switching node. The SuperSO8 DSC pins 1-3 are Source and pins 5-8 are Drain; route the high-side switch-node copper on the inner layer so it does not capacitively couple into the gate trace. A 10-ohm gate resistor in series with the driver output dampens ringing on the parasitic gate-drain capacitance.
Three pitfalls recur in ISC016N08NM8SCATMA1 designs: (1) assuming the SuperSO8 DSC pinout matches a standard SO-8 (the pin numbering is 1-3 Source, 4 Gate, 5-8 Drain rather than the SO-8 standard SO/GND/D/D arrangement), (2) forgetting that the body diode carries the dead-time current in half-bridges and reverse-recovery behavior matters, (3) overlooking that the OptiMOS 8 gate threshold can be lower than older generations, requiring tighter VGS margin to avoid unintended turn-on during transients. Validate by reading the latest Infineon datasheet rather than relying on memory of OptiMOS 5/6 thresholds.
Estimated: at nominal 48V input and 100 kHz switching, a typical 600W synchronous rectifier stage using the ISC016N08NM8SCATMA1 dissipates 6-8W conduction loss plus 1-2W switching loss. Use a 4-layer PCB with 2 oz copper on outer layers to keep total thermal resistance within budget; without a heatsink, the dual-side cooling package supports 6-8W continuous dissipation at 70°C ambient. If the load profile exceeds 10W continuous, attach a small clip-on heatsink to the top copper pour.
Compliance Information
RoHS and REACH compliance per Infineon product page. AEC-Q101 automotive qualification status not explicitly stated in verified data for this exact MPN - verify with Infineon automotive team before deploying in production automotive programs.
