ISZ056N03LF2SATMA1 vs ISC052N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISZ056N03LF2SATMA1 by Infineon and ISC052N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 β ActiveInfineon
ISC052N03LF2SATMA1 - 30V N-Ch 74A OptiMOS 5 MOSFET | Infineon
ISC052N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISZ056N03LF2SATMA1 | ISC052N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $0.35 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | StrongIRFET 2 | OptiMOS 5 30V |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta | 16 A | β |
| Continuous Drain Current (ID) at Tc | 72 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | β |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | β |
| On-Resistance (RDS(on)) max at VGS=10V | 5.6 mOhm | β |
| On-Resistance (RDS(on)) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 52 W | β |
| Operating Temperature Range | -55 C to +175 C | -55Β°C to +150Β°C |
| Package | PG-TSDSON-8 (PQFN 3.3x3.3 mm) | PG-TDSON-8-62 (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Continuous Drain Current (ID) at TA=25Β°C | β | 18 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 74 A |
| On-Resistance RDS(on) max at VGS=10V | β | 5.2 mΞ© |
| Power Dissipation (PD) at TA=25Β°C | β | 3 W |
| Power Dissipation (PD) at TC=25Β°C | β | 52 W |
| Technology | β | Trench MOSFET (OptiMOS 5) |
| Polarity | β | N-Channel |
| Pin Count | β | 8 |
| MSL Level | β | [DATA_NEEDED: MSL rating] |