ISC052N03LF2SATMA1 - 30V N-Ch 74A OptiMOS 5 MOSFET | Infineon
MPN: ISC052N03LF2SATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.85 | $0.85 |
| 10 | $0.76 | $7.60 |
| 100 | $0.62 | $62.00 |
| 500 | $0.51 | $255.00 |
| 1,000 | $0.42 | $420.00 |
| 5,000 | $0.35 | $1,750.00 |
ISC052N03LF2SATMA1 Overview
An N-channel MOSFET is a voltage-controlled semiconductor switch whose drain-source channel is induced by a positive gate-source voltage, enabling efficient power switching at frequencies far beyond the capability of bipolar transistors. In the system hierarchy, this device falls under discrete semiconductors > transistors > MOSFETs > power MOSFETs, and serves as a fundamental switching element in switched-mode power supplies (SMPS), motor drives, and battery protection circuits.
Key features include a 30 V drain-source breakdown voltage (VDS), 5.2 mΩ maximum RDS(on) at VGS=10 V, low gate charge (Qg) typical of OptiMOS 5 technology, and a logic-level compatible threshold voltage. The PG-TDSON-8-62 package provides an exposed drain pad for direct PCB heat-sinking and ultra-low package parasitic inductance, essential for high-frequency switching where every nanohenry of source inductance degrades switching speed. Power dissipation ratings are 3 W at TA=25 °C and 52 W at TC=25 °C, indicating a strong thermal envelope relative to the package footprint.
Architecturally, the OptiMOS 5 platform uses advanced trench cell geometry with a refined epitaxial structure, achieving lower specific on-resistance per unit silicon area than the prior OptiMOS 3 generation. This translates to either smaller die size for the same RDS(on) or lower conduction loss for a given footprint, both of which directly improve system power density. The 5.2 mΩ on-resistance also limits I²R losses to roughly 0.7 W at 12 A continuous load.
Typical applications include synchronous rectification in 12 V server and telecom buck converters, OR-ing FETs in redundant power systems, hot-swap controllers in enterprise equipment, and low-voltage motor drive H-bridges. In each case the device's low RDS(on) and small TDSON footprint simplify PCB layout and reduce overall solution size.
When designing with this MOSFET, pay particular attention to gate-drive voltage headroom: at VGS=4.5 V the RDS(on) is significantly higher than the 10 V spec, so for logic-level or 5 V-driven systems check the typical curves before assuming 5.2 mΩ. Place the gate drive return path directly over the source pad to minimize parasitic source inductance that can cause ringing and false turn-on.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers a single source for component selection.
Drop-in alternatives for ISC052N03LF2SATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISC052N03LF2SATMA1 (same form factor and footprint) — differing in Package, Continuous Drain Current (ID) at TA=25C, Continuous Drain Current (ID) at TC=25C, Gate Threshold Voltage (VGS(th)), On-Resistance RDS(on) max at VGS=10V.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISC028N03LF2SATMA1
✅ Drop-In✓ In Stock
$0.86 / Unit
View Datasheet →ISC056N03LF2SATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
ISZ056N03LF2SATMA1
✅ Drop-In✓ In Stock
$0.49 / Unit
View Datasheet →ISZ033N03LF2SATMA1
✅ Drop-In✓ In Stock
$0.68 / Unit
View Datasheet →BSC052N04LSGATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
NTMFS5C430NLT1G
✅ Drop-In📋 Reference alternative (not in catalog)
ISC052N03LF2SATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 30V |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A |
| Continuous Drain Current (ID) at TC=25°C | 74 A |
| On-Resistance RDS(on) max at VGS=10V | 5.2 mΩ |
| Power Dissipation (PD) at TA=25°C | 3 W |
| Power Dissipation (PD) at TC=25°C | 52 W |
| Package | PG-TDSON-8-62 (TDSON EP) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55°C to +150°C |
| Technology | Trench MOSFET (OptiMOS 5) |
| Polarity | N-Channel |
| Pin Count | 8 |
| RoHS Status | Compliant |
ISC052N03LF2SATMA1 Pin Configuration
| Pin 1 | G — Gate - MOSFET gate control input |
| Pin 2 | S — Source - connected to source pad |
| Pin 3 | S — Source - connected to source pad |
| Pin 4 | D — Drain - connected to exposed pad (drain tab) |
| Pin 5 | D — Drain - connected to exposed pad (drain tab) |
| Pin 6 | D — Drain - connected to exposed pad (drain tab) |
| Pin 7 | S — Source - connected to source pad |
| Pin 8 | S — Source - connected to source pad |
| Pin EP | DRAIN PAD — Exposed thermal pad - internally connected to Drain, must be soldered to PCB for cooling |
Safe Operating Area (DC, TJ=150°C)
Typical Applications
ISC052N03LF2SATMA1 is suitable for 6 applications: 12V Synchronous Rectification in Server SMPS, Hot-Swap and OR-ing in Enterprise Equipment, Battery Protection and Load Switching in Portable Devices, Low-Voltage DC Motor Drive H-Bridge, USB Type-C Power Delivery Sink/Source Path, Automotive 12V Auxiliary Load Switching.
12V Synchronous Rectification in Server SMPS
The ISC052N03LF2SATMA1 is purpose-built for the low-side synchronous rectifier position in 12V server and telecom buck converters. With 5.2 mΩ RDS(on) at VGS=10V, conduction loss at 20 A continuous load is only 2.1W per FET, enabling single-FET sync-FET designs at 25 A without exceeding thermal limits. Its OptiMOS 5 trench technology provides low gate charge (Qg typically under 30 nC) which reduces driver losses and enables switching frequencies above 500 kHz. Compared to older OptiMOS 3 generations at the same voltage rating, the ISC052N03LF2SATMA1 typically cuts switching losses by 30-40%, directly improving overall SMPS efficiency by 0.5-1.0 percentage points. The PG-TDSON-8-62 package's exposed drain pad allows direct top-side or bottom-side PCB cooling.
Recommended
Hot-Swap and OR-ing in Enterprise Equipment
The ISC052N03LF2SATMA1 serves as an OR-ing FET in redundant 12V power distribution and as the pass element in hot-swap controllers for enterprise storage and networking gear. Its 30V VDS rating accommodates 12V nominal bus plus full load-dump transients, while 5.2 mΩ RDS(on) keeps power dissipation manageable even at 10-15 A continuous loads: 15 A × 5.2 mΩ = 1.17 W dissipation. The device's low gate charge simplifies the controller's gate-drive design and allows fast turn-off during fault conditions to protect downstream components. In OR-ing applications, the body diode's reverse recovery characteristics are critical; the OptiMOS 5 platform provides soft recovery that minimizes voltage spikes when one rail disconnects from the paralleled supply.
Recommended
Battery Protection and Load Switching in Portable Devices
The ISC052N03LF2SATMA1's 5.2 mΩ RDS(on) and small TDSON-8-62 footprint make it well-suited for load-switch and battery-protection circuits in 1S-2S Li-ion powered portable equipment, power banks, and USB-PD source applications. At 5 A load current the conduction loss is only 0.13 W, keeping efficiency above 97% even with continuous 5V/3A output. The 30V VDS rating provides robust transient protection for the typical 4.2V Li-ion maximum plus inductive kick-back from motors or hot-plug events. Designers should verify the gate-drive voltage: at VGS=3.3V (typical MCU GPIO drive) the ISC052N03LF2SATMA1 will be in the linear region; a small gate-driver IC or charge-pump is recommended for logic-level control.
Recommended
Low-Voltage DC Motor Drive H-Bridge
The ISC052N03LF2SATMA1 is well-suited as the switching element in 12V/24V brushed DC motor H-bridge drives used in robotics, small appliances, and automotive accessories. Its 5.2 mΩ RDS(on) and 30V VDS rating accommodate motor back-EMF transients (typically 2-3x supply voltage) with adequate margin. The PG-TDSON-8-62 package's exposed pad enables PCB-direct heat-sinking, which is critical in motor drive applications where stall currents can exceed 50 A momentarily. Pairs of ISC052N03LF2SATMA1 form an efficient 4-FET H-bridge; the low Qg reduces dead-time losses and enables PWM frequencies above 25 kHz for silent operation (above the audible range).
Recommended
USB Type-C Power Delivery Sink/Source Path
In USB Type-C Power Delivery (PD) applications, the ISC052N03LF2SATMA1 functions as the VBUS load-switch or path-management FET. At 5A PD output (typical 100W at 20V), the conduction loss is 5A × 5.2 mΩ = 0.13 W - negligible. Its 30V VDS comfortably handles the 20V PD contract plus transient over-voltages. The TDSON-8-62 footprint integrates well into space-constrained Type-C connector breakout boards. For multi-port applications, paralleling two ISC052N03LF2SATMA1 halves the RDS(on) to 2.6 mΩ, enabling 100W (20V/5A) PD output with sub-1W dissipation - critical for thermally-limited dongle and hub designs.
Recommended
Automotive 12V Auxiliary Load Switching
Although the standard ISC052N03LF2SATMA1 is not AEC-Q100 qualified, its Infineon OptiMOS 5 platform is automotive-proven in the sister IAUC product family. The device is suitable for non-safety automotive applications such as interior lighting, infotainment power rails, and 12V accessory switching where the design already includes external protection and the AEC-Q100 requirement does not strictly apply. Its 30V VDS handles the 12V automotive bus with load-dump transients up to 35V with some external TVS clamping. Designers should select the IAUCN08S7L033ATMA1 or similar AEC-Q100 qualified OptiMOS 5 variant for safety-critical automotive systems.
Recommended
Recommended Products Summary
Engineering reference data for ISC052N03LF2SATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC028N03LF2SATMA1 | ISC056N03LF2SATMA1 | BSC052N04LSGATMA1 | NTMFS5C430NLT1G |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-TDSON-8-62 | PG-TDSON-8-62 (same) | PG-TDSON-8-62 (same) | PG-TDSON-8-62 (same) | SO-8FL / TDSON-8 EP (JEDEC equivalent) |
| VDS max | 30 V | 30 V | 30 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 5.2 mΩ | 2.8 mΩ | 5.6 mΩ | 5.2 mΩ | 4.3 mΩ |
| Continuous ID at TC=25°C | 74 A | 100 A | 70 A | 85 A | 60 A |
| Technology Generation | OptiMOS 5 (trench) | OptiMOS 5 (trench) | OptiMOS 5 (trench) | OptiMOS-2 (older trench) | onsemi trench |
| AEC-Q100 Qualified | No | No | No | No | Yes |
Key Differentiators
- Industry-leading OptiMOS 5 FOM at 30V rating (vs ISC028N03LF2SATMA1)
- 30V optimized for 12V/5V rails (vs BSC052N04LSGATMA1)
- Higher switching efficiency than older OptiMOS generations (vs BSC019N04LSTATMA1 (OptiMOS-2, 40V))
- Standard industry 5x6mm TDSON-8 footprint (vs NTMFS5C430NLT1G (onsemi SO-8FL))
Design Notes
At 20 A continuous drain current with VGS=10V, the ISC052N03LF2SATMA1 dissipates approximately 2.1 W (I²R) into its PG-TDSON-8-62 package. The datasheet's thermal resistance from junction to ambient (θJA) on a 1 in² FR4 copper pad is around 50 °C/W, yielding a junction temperature rise of ~105 °C above 25 °C ambient - this is acceptable up to 100 °C ambient but requires derating above that. For continuous operation above 15 A in still air, attach a small PCB heatsink or expand the drain-pad copper area to at least 2 in² to drop θJA below 35 °C/W. Estimated: based on 20 A × 5.2 mΩ = 2.08 W and typical TDSON-8 θJA values from the Infineon OptiMOS 5 thermal application note.
Place the ISC052N03LF2SATMA1 with its exposed drain pad soldered directly to the PCB top-layer copper pour for maximum heat dissipation. Use a Kelvin-source connection by routing the gate-drive return through a separate via from the source sense pin (pin 2 or 3) rather than the main power source tab - this avoids the source-inductance-induced gate-drive ringing that can cause dv/dt-induced turn-on in half-bridge configurations. Keep the gate-drive trace short (under 10 mm) and route it away from the drain switching node to minimize capacitive coupling. Reference: Infineon OptiMOS 5 application note on TDSON-8-62 PCB layout.
The ISC052N03LF2SATMA1's threshold voltage (VGS(th)) is typically 1.7 V and may go as low as 1.0 V at elevated temperature - do not use it in circuits where the gate can float, as any residual leakage can partially turn on the FET and cause shoot-through or excessive quiescent current. Always include a gate pull-down resistor (typically 10-100 kΩ) from gate to source. Additionally, the 30V VDS rating is absolute maximum; in circuits with inductive loads (motors, solenoids, transformers) include a TVS diode or snubber to clamp transients below 30 V. Exceeding VDS even briefly will cause avalanche and likely device failure.
For optimum performance drive the ISC052N03LF2SATMA1 gate with VGS=10V to achieve the 5.2 mΩ datasheet RDS(on); at VGS=4.5V the RDS(on) roughly doubles. Use a dedicated gate-driver IC (e.g., Infineon 2EDL series) rather than a logic-level GPIO for switching above 1 MHz - the gate charge (~30 nC) multiplied by switching frequency creates significant dynamic drive current that GPIO pins cannot source cleanly. Add a 10Ω gate-source resistor in series with the gate to dampen high-frequency ringing without slowing switching speed excessively.
Compliance Information
RoHS and REACH compliant per Infineon product page. Standard grade (not AEC-Q100 qualified) - select Infineon's IAUCN-prefixed variants for automotive. Halogen-free per Infineon OptiMOS 5 family datasheet. Conflict-minerals compliant per Infineon supplier declaration.
