ISZ230N10NM6ATMA1 vs IQE020N04LM6CGSCATMA1 Comparison
Detailed side-by-side comparison of ISZ230N10NM6ATMA1 by Infineon and IQE020N04LM6CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ230N10NM6ATMA1
ISZ230N10NM6ATMA1 - 100V 31A OptiMOS 6 N-MOSFET | Infineon
ISZ230N10NM6ATMA1 β ActiveInfineon
IQE020N04LM6CGSCATMA1
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΞ© N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 β ActiveSpecification Comparison
| Parameter | ISZ230N10NM6ATMA1 | IQE020N04LM6CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $1.65 |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (Ta) | 7.7 A | β |
| Continuous Drain Current (Tc) | 31 A | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 48 W | β |
| On-Resistance RDS(on) at VGS=10V | 23 mΞ© (typ, ID=10A) | β |
| Gate Threshold Voltage VGS(th) | 3.3 V (typ at 13 Β΅A) | β |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6 trench |
| Package | PG-TSDSON-8 FL (3.3 x 3.3 mm) | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (junction) | -55 Β°C to +150 Β°C (junction, per Infineon MOSFET convention) |
| Gate Drive Voltage (recommended) | 10 V | β |
| MSL Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) |
| RoHS Status | Compliant | Compliant |
| Family | OptiMOS 6 (100V class) | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS 6 low-voltage power MOSFET |
| Channel Type | β | N-Channel |
| Continuous Drain Current at TA=25Β°C | β | 25 A |
| Continuous Drain Current at TC=25Β°C | β | 166 A |
| Maximum RDS(on) | β | 2.0 mΞ© (per IQE part-number decode) |
| Power Dissipation at TA=25Β°C | β | 2.5 W |
| Power Dissipation at TC=25Β°C | β | 107 W |
| Pin Count | β | 9 |
| Lead-Free | β | Yes |